Method of manufacturing semiconductor device
Described herein is a technique capable of improving a quality of a film formed on a substrate. According to the technique described herein, there is provided a method of manufacturing a semiconductor device, including: (a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber accommodating a substrate by a first gas discharge system connected to the first gas supply pipe; (b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and (c) supplying the first gas generated by the vaporizer to the process chamber accommodating the substrate via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before (a) is performed or after (b) is performed.
1. A method of manufacturing a semiconductor device, comprising:
(a) exhausting an inner atmosphere of a first gas supply pipe configured to supply a first gas generated by a vaporizer to a process chamber capable of accommodating a substrate by a first gas discharge system connected to the first gas supply pipe;
(b) exhausting an inner atmosphere of the vaporizer through a second gas discharge system provided at a vaporizer outlet pipe of the vaporizer by supplying an inert gas to the vaporizer via a vaporizer inlet pipe of the vaporizer; and
(c) supplying the first gas generated by the vaporizer to the process chamber without the substrate accommodated therein via the vaporizer outlet pipe, the first gas supply pipe and a first timing valve provided at the first gas supply pipe before or after performing (a) and (b),
wherein the inner atmosphere of the vaporizer is exhausted through a second discharge pipe of the second gas discharge system and a second discharge valve provided at the second discharge pipe in (b), and opening or closing of the second discharge valve is controlled based on an amount of source in the vaporizer, an idling time of the vaporizer, or both,
wherein the amount of the source in the vaporizer is detected based on at least one of a level of a liquid source in the vaporizer, a weight of the source in the vaporizer, an accumulated amount of a flow rate of the inert gas, and an accumulated time duration of the first timing valve in open state.
2. The method of claim 1 , wherein (b) is performed after (a) is performed.
3. The method of claim 2 , wherein the inner atmosphere of the first gas supply pipe is vacuum-exhausted in (a) with an outlet valve provided at the vaporizer outlet pipe closed, and (c) is performed after (b) is performed.
4. The method of claim 3 , wherein the outlet valve provided at the vaporizer outlet pipe is opened as the second discharge valve is closed, and the second discharge valve is opened as the outlet valve is closed.
5. The method of claim 2 , wherein an outlet valve provided at the vaporizer outlet pipe is opened as the second discharge valve is closed, and the second discharge valve is opened as the outlet valve is closed.
6. The method of claim 1 , wherein the inner atmosphere of the first gas supply pipe is exhausted in (a) by supplying an inert gas into the first gas supply pipe via a purge valve provided at the first gas supply pipe.
7. The method of claim 6 , wherein the inner atmosphere of the first gas supply pipe is vacuum-exhausted in (a) with an outlet valve provided at the vaporizer outlet pipe closed, and (c) is performed after (b) is performed.
8. The method of claim 1 , wherein the inner atmosphere of the first gas supply pipe is vacuum-exhausted in (a) with an outlet valve provided at the vaporizer outlet pipe closed, and (c) is performed after (b) is performed.
9. The method of claim 8 , wherein the outlet valve provided at the vaporizer outlet pipe is opened as the second discharge valve is closed, and the second discharge valve is opened as the outlet valve is closed.
10. The method of claim 1 , wherein an outlet valve provided at the vaporizer outlet pipe is opened as the second discharge valve is closed, and the second discharge valve is opened as the outlet valve is closed.
11. The method of claim 1 , wherein the amount of the source in the vaporizer is detected based on a level of a liquid source in the vaporizer.
12. The method of claim 1 , wherein the amount of the source in the vaporizer is detected based on a weight of the source in the vaporizer.
13. The method of claim 1 , wherein the amount of the source in the vaporizer is detected based on an accumulated amount of a flow rate of the inert gas.
14. The method of claim 1 , wherein the amount of the source in the vaporizer is detected based on an accumulated time duration of the first timing valve in open state.
15. The method of claim 1 , further comprising:
(d) loading the substrate into the process chamber and processing the substrate in the process chamber after (a), (b) and (c) are performed.