Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
There is provided a technique that includes forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle. The cycle includes non-simultaneously performing: (a) forming a first layer by supplying a precursor gas to the substrate; (b) forming an NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of the NH termination to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate, wherein in (c), an N termination ratio in an upper portion of the concave portion of the pattern is made higher than an N termination ratio in a lower portion of the concave portion of the pattern.
1. A method of manufacturing a semiconductor device, comprising:
forming a nitride film on a pattern including a concave portion formed in a surface of a substrate by repeating a cycle including non-simultaneously performing:
(a) forming a first layer by supplying a precursor gas to the substrate;
(b) forming a NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and
(c) modifying a part of a NH termination in the NH-terminated second layer to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate,
wherein in (c), an N termination ratio of the NH-terminated second layer in an upper portion of the concave portion of the pattern is made higher than an N termination ratio of the NH-terminated second layer in a lower portion of the concave portion of the pattern.
2. The method according to claim 1 , wherein in (c), an NH termination ratio of the NH-terminated second layer in the lower portion of the concave portion of the pattern is made higher than an NH termination ratio of the NH-terminated second layer in the upper portion of the concave portion of the pattern.
3. The method according to claim 1 , wherein in (c), an N/NH termination ratio of the NH-terminated second layer in the upper portion of the concave portion of the pattern is made higher than an N/NH termination ratio of the NH-terminated second layer in the lower portion of the concave portion of the pattern.
4. The method according to claim 1 , wherein in (c), an N termination ratio of the NH-terminated second layer in the upper portion of the concave portion of the pattern is made higher than an NH termination ratio of the NH-terminated second layer in the upper portion of the concave portion of the pattern, and an NH termination ratio of the NH-terminated second layer in the lower portion of the concave portion of the pattern is made higher than an N termination ratio of the NH-terminated second layer in the lower portion of the concave portion of the pattern.
5. The method according to claim 1 , wherein adsorption of an element included in the precursor gas to the upper portion of the concave portion of the pattern in (a) of a next cycle is suppressed by (c).
6. The method according to claim 1 , wherein adsorption of an element included in the precursor gas to the lower portion of the concave portion of the pattern in (a) of a next cycle is promoted by (c).
7. The method according to claim 1 , wherein the hydrogen nitride-based gas is plasma-excited and supplied in (b), and a pressure in a space in which the substrate is present in (c) is made larger than a pressure in a space in which the substrate is present in (b).
8. The method according to claim 1 , wherein the hydrogen nitride-based gas is plasma-excited and supplied in (b), and a supply power when the nitrogen gas is plasma-excited in (c) is made smaller than a supply power when the hydrogen nitride-based gas is plasma-excited in (b).
9. The method according to claim 1 , wherein the hydrogen nitride-based gas is plasma-excited and supplied in (b), and wherein a time for plasma-exciting and supplying the nitrogen gas in (c) is made shorter than a time for plasma-exciting and supplying the hydrogen nitride-based gas in (b).
10. The method according to claim 1 , wherein the cycle is repeated to form the nitride film while a thickness of a layer formed on the lower portion of the concave portion of the pattern is made thicker than a thickness of a layer formed on the upper portion of the concave portion of the pattern.
11. The method according to claim 1 , wherein the cycle is repeated to form the nitride film while a thickness of a layer formed by laminating the modified NH-terminated second layer formed on the lower portion of the concave portion of the pattern is made thicker than a thickness of a layer formed by laminating the modified NH-terminated second layer formed on the upper portion of the concave portion of the pattern.
12. The method according to claim 1 , wherein the cycle is repeated to fill the concave portion of the pattern with the nitride film by realizing a bottom-up film formation by forming the nitride film while a thickness of a layer formed on the lower portion of the concave portion of the pattern is made thicker than a thickness of a layer formed on the upper portion of the concave portion of the pattern.
13. The method according to claim 1 , wherein the cycle is repeated to fill the concave portion of the pattern with the nitride film by realizing a bottom-up film formation by forming the nitride film while a thickness of a layer formed by laminating the modified NH-terminated second layer formed on the lower portion of the concave portion of the pattern is made thicker than a thickness of a layer formed by laminating the modified NH-terminated second layer formed on the upper portion of the concave portion of the pattern.
14. The method according to claim 1 , wherein the precursor gas comprises a halosilane-based gas.
15. The method according to claim 1 , wherein the precursor gas comprises a chlorosilane-based gas.
16. The method according to claim 1 , wherein the precursor gas comprises at least one selected from the group consisting of a monochlorosilane gas, a dichlorosilane gas, a trichlorosilane gas, a tetrachlorosilane gas, a hexachlorodisilane gas, and an octachlorotrisilane gas.
17. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a precursor gas supply system configured to supply a precursor gas to the substrate in the process chamber;
a hydrogen nitride-based gas supply system configured to supply a hydrogen nitride-based gas to the substrate in the process chamber;
a nitrogen gas supply system configured to supply a nitrogen gas to the substrate in the process chamber;
a plasma excitation unit configured to plasma-excite a gas; and
a controller configured to control the precursor gas supply system, the hydrogen nitride-based gas supply system, the nitrogen gas supply system, and the plasma excitation unit so as to form a nitride film on a pattern including a concave portion formed in a surface of the substrate in the process chamber by repeating a cycle including non-simultaneously performing: (a) forming a first layer by supplying the precursor gas to the substrate; (b) forming a NH-terminated second layer by supplying the hydrogen nitride-based gas to the substrate to nitride the first layer; and (c) modifying a part of a NH termination in the NH-terminated second layer to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying the nitrogen gas to the substrate, wherein in (c), an N termination ratio of the NH-terminated second layer in an upper portion of the concave portion of the pattern is made higher than an N termination ratio of the NH-terminated second layer in a lower portion of the concave portion of the pattern.
18. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process, in a process chamber of the substrate processing apparatus, the process comprising:
forming a nitride film on a pattern including a concave portion formed in a surface of the substrate by repeating a cycle including non-simultaneously performing:
(a) forming a first layer by supplying a precursor gas to the substrate;
(b) forming a NH-terminated second layer by supplying a hydrogen nitride-based gas to the substrate to nitride the first layer; and
(c) modifying a part of a NH termination in the NH-terminated second layer to an N termination, and maintaining another part of the NH termination as it is without modifying the another part to the N termination by plasma-exciting and supplying a nitrogen gas to the substrate,
wherein in (c), an N termination ratio of the NH-terminated second layer in an upper portion of the concave portion of the pattern is made higher than an N termination ratio of the NH-terminated second layer in a lower portion of the concave portion of the pattern.