Low sputtering, cross-field, gas switch and method of operation

1. A gas switch, comprising:

a gas-tight housing containing an ionizable gas;

an anode disposed within said gas-tight housing;

a cathode disposed within said gas-tight housing, said cathode comprising a conduction surface;

a control grid positioned between said anode and said cathode, said control grid arranged to receive a bias voltage to establish a conducting plasma between said anode and said cathode; and

a plurality of magnets selectively arranged to generate a magnetic field proximate said conduction surface that reduces the kinetic energy of charged particles striking said conduction surface, wherein said plurality of magnets are further arranged, such that a maximum magnetic field strength of the magnetic field is greater than 100 Gauss.

2. The gas switch of claim 1 , wherein said plurality of magnets are further arranged, such that a maximum magnetic field of the magnetic field is greater than 500 Gauss.

3. The gas switch of claim 1 , wherein said plurality of magnets are further arranged, such that a maximum magnetic field strength of the magnetic field is greater than 1,000 Gauss.

4. The gas switch of claim 1 , wherein said plurality of magnets are further arranged, such that a maximum magnetic field strength of the magnetic field occurs in a range of 1-10 millimeters from said conduction surface.

5. The gas switch of claim 1 , wherein said plurality of magnets are further arranged, such that a magnetic field strength of the magnetic field at said conduction surface is less than half a maximum magnetic field strength.

6. The gas switch of claim 1 , wherein said gas-tight housing contains least one of i) hydrogen gas, ii) helium gas, and iii) a mixture of hydrogen gas and helium gas.

7. The gas switch of claim 1 , wherein said cathode comprises at least one of i) tantalum, ii) molybdenum, iii) tungsten, iv) gallium, v) gallium-indium, vi) gallium-tin, vii) gallium-indium-tin, viii) aluminum, ix) tungsten, and x) stainless steel.

8. The gas switch of claim 1 , wherein the magnetic field extends at least a distance from said conduction surface, wherein the magnetic field controls a voltage drop over the distance, and wherein said plurality of magnets are configured to at least one of i) increase the distance and ii) reduce the voltage drop over the distance.

9. The gas switch of claim 1 , wherein said plurality of magnets comprise at least one annular magnet arranged circumferentially about a lower surface of said cathode.

10. The gas switch of claim 1 , wherein said plurality of magnets comprise a plurality of concentrically arranged annular magnets disposed circumferentially about a lower surface of said cathode and a central magnet disposed proximal the lower surface of said cathode along a switch axis.

11. A gas switch, comprising:

an anode;

a cathode defining an interior volume between said anode and said cathode;

an ionizable gas filling the interior volume; and

a system of magnets disposed proximate said cathode, said system of magnets selectively arranged to generate a magnetic field that reduces the kinetic energy of charged particles striking said cathode, wherein said system of magnets is further arranged, such that a maximum magnetic field strength of the magnetic field is greater than 100 Gauss.

12. The gas switch of claim 11 , wherein said system of magnets is further arranged, such that a maximum magnetic field strength of the magnetic field occurs in a range of 1-10 millimeters from a conduction surface of said cathode.

13. The gas switch of claim 11 , wherein said system of magnets is further arranged, such that a magnetic field strength of the magnetic field at a conduction surface of said cathode is less than half a maximum magnetic field strength.

14. The gas switch of claim 11 , wherein said ionizable gas comprises at least one of i) hydrogen gas, ii) helium gas, and iii) a mixture of hydrogen gas and helium gas.

15. The gas switch of claim 11 , wherein said cathode comprises at least one of i) tantalum, ii) molybdenum, iii) tungsten, iv) gallium, v) gallium-indium, vi) gallium-tin, vii) viii) aluminum, ix) tungsten, and x) stainless steel.

16. The gas switch of claim 11 , wherein said cathode comprises a conduction surface, wherein the magnetic field extends at least a distance from said conduction surface, wherein the magnetic field controls a voltage drop over the distance, and wherein said system of magnets is configured to at least one of i) increase the distance and ii) reduce the voltage drop over the distance.

17. The gas switch of claim 11 , wherein said system of magnets comprises at least one annular magnet arranged circumferentially about a lower surface of said cathode.

18. A method for manufacturing a gas switch, said method comprising:

providing a gas-tight housing;

positioning a cathode within the gas-tight housing, the cathode comprising a conduction surface;

positioning an anode within the gas-tight housing;

selectively positioning a plurality of magnets proximate the cathode, the plurality of magnets arranged to reduce the kinetic energy of charged particles striking the conduction surface of the cathode during operation; and

filling the gas-tight housing with an ionizable gas, wherein said plurality of magnets are further arranged, such that a maximum magnetic field strength of the magnetic field is greater than 100 Gauss.