Fan-out semiconductor package module

1. A fan-out semiconductor package module comprising:

a core member having first and second through-holes spaced apart from each other and one or more slits;

a semiconductor chip disposed in the first through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;

one or more first passive components disposed in the second through-hole;

an encapsulant encapsulating at least portions of each of the core member, the inactive surface of the semiconductor chip, and the one or more first passive components;

a connection member disposed on the core member, the active surface of the semiconductor chip, and the one or more first passive components and including redistribution layers electrically connected to the connection pads and the one or more first passive component; and

first metal layers filling the one or more slits,

wherein at least one of the one or more slits is formed between the first and second through-holes.

2. The fan-out semiconductor package module of claim 1 , further comprising second metal layers disposed on walls of the second through-hole.

3. The fan-out semiconductor package module of claim 2 , wherein the first metal layer filling the at least one slit formed between the first and second through-holes is connected to the second metal layer.

4. The fan-out semiconductor package module of claim 2 , wherein the first metal layer filling the at least one slit formed between the first and second through-holes is spaced apart from the second metal layer.

5. The fan-out semiconductor package module of claim 2 , further comprising a third metal layer disposed on an upper surface of the core member.

6. The fan-out semiconductor package module of claim 5 , wherein the third metal layer is connected to the first and second metal layers.

7. The fan-out semiconductor package module of claim 5 , further comprising a backside metal layer disposed on the encapsulant,

wherein the backside metal layer is connected to the third metal layer through backside vias penetrating through at least portions of the encapsulant.

8. The fan-out semiconductor package module of claim 2 , further comprising a fourth metal layer disposed on a lower surface of the core member.

9. The fan-out semiconductor package module of claim 8 , wherein the fourth metal layer is connected to the first and second metal layers.

10. The fan-out semiconductor package module of claim 9 , wherein the connection member includes an electromagnetic interference (EMI) blocking structure surrounding the redistribution layers, and

the fourth metal layer is connected to the EMI blocking structure.

11. The fan-out semiconductor package module of claim 1 , wherein the connection member includes a heat dissipation structure disposed on the active surface of the semiconductor chip.

12. The fan-out semiconductor package module of claim 1 , wherein the encapsulant fills at least portions of each of the first and second through-holes.

13. The fan-out semiconductor package module of claim 12 , wherein walls of the first through-hole are in contact with the encapsulant.

14. The fan-out semiconductor package module of claim 1 , wherein the core member further has a third through-hole spaced apart from the first and second through-holes, and

one or more second passive components are disposed in the third through-hole.

15. The fan-out semiconductor package module of claim 14 , wherein at least the other of the one or more slits is formed between the first and third through-holes.

16. The fan-out semiconductor package module of claim 14 , further comprising:

second metal layers disposed on walls of the second and third through-holes;

a third metal layer disposed on an upper surface of the core member; and

a fourth metal layer disposed on a lower surface of the core member.