Substrate processing apparatus

1. A substrate processing apparatus comprising:

a processing chamber for accommodating a substrate therein;

a focus ring disposed to surround a peripheral portion of the substrate disposed in the processing chamber;

a mounting table for mounting thereon the substrate and the focus ring; and

a pusher pin configured to protrude from the mounting table,

wherein the focus ring comprises:

an inner focus ring placed adjacent to the substrate; and

an outer focus ring placed so as to surround the inner focus ring,

wherein the pusher pin is configured to lift up the inner focus ring away from the outer focus ring until a bottom surface of the inner focus ring is positioned higher than a top surface of the outer focus ring.

2. The substrate processing apparatus of claim 1 ,

wherein the inner focus ring lifted up by the pusher pin is exposed to plasma within the processing chamber such that deposits adhering to the inner focus ring are removed.

3. The substrate processing apparatus of claim 2 ,

wherein the plasma decomposes the deposits to remove the deposits.

4. The substrate processing apparatus of claim 1 ,

wherein the inner focus ring is configured to be cooled while the outer focus ring is configured not to be cooled.

5. The substrate processing apparatus of claim 1 ,

wherein the mounting table includes a step-shaped portion having a lower tread, an upper tread, and a riser between the lower tread and the upper tread, and

the pusher pin is configured to protrude from the lower tread of the step-shaped portion.

6. The substrate processing apparatus of claim 1 ,

wherein deposits adhering to the inner focus ring are removed in a gap between the inner focus ring and the outer focus ring.

7. The substrate processing apparatus of claim 1 ,

wherein at least a part of the inner focus ring and at least a part of the outer focus ring overlap each other when viewed from above.

8. The substrate processing apparatus of claim 1 ,

wherein the pusher pin is configured to lift up the inner focus ring away from the outer focus ring when a wafer-less dry cleaning process is performed in the substrate processing apparatus.

9. A substrate processing apparatus comprising:

a processing chamber;

a susceptor including a step-shaped portion at a periphery of a top portion of the susceptor, the step-shaped portion having a lower tread, an upper tread and a riser between the lower tread and the upper tread;

an inner focus ring placed on the lower tread of the step-shaped portion;

an outer focus ring placed to surround the inner focus ring;

a lift unit configured to protrude from the lower tread of the step-shaped portion and to lift up the inner focus ring; and

wherein a part of the inner focus ring and a part of the outer focus ring overlap each other when viewed from above.

10. The processing apparatus according to claim 9 , wherein the lift unit is configured to come into contact with a bottom surface of the inner focus ring.

11. The substrate processing apparatus according to claim 9 , wherein the lift unit is configured to lift up the inner focus ring when a substrate is absent from the processing chamber.

12. The substrate processing apparatus according to claim 11 , wherein an innermost diameter of the inner focus ring is smaller than a diameter of the substrate.

13. The substrate processing apparatus according to claim 9 , further comprising a side protection member made of a dielectric material, placed to surround the susceptor, and configured to support the outer focus ring.

14. The substrate processing apparatus of claim 9 ,

wherein the lift unit is configured to lift up the inner focus ring away from the outer focus ring until a bottom surface of the inner focus ring is positioned higher than a top surface of the outer focus ring.

15. The substrate processing apparatus according to claim 9 , further comprising a side protection member placed to surround the susceptor, and

wherein the outer focus ring is placed on the side protection member.

16. A plasma processing apparatus comprising:

a processing chamber;

a susceptor disposed in the processing chamber and including a step-shaped portion at a periphery of a top portion of the susceptor, the step-shaped portion having a lower tread, an upper tread, and a riser between the lower tread and the upper tread;

a side protection member disposed to surround an outer periphery of the susceptor;

an inner focus ring disposed adjacent to an outer periphery of the susceptor;

an outer focus ring disposed to surround the inner focus ring; and

a lifter configured to protrude from the lower tread and to lower and raise the inner focus ring between a lowered position and a raised position,

wherein an inner periphery of the inner focus ring and a part of the susceptor overlap each other when viewed from above,

a part of the inner focus ring and a part of the outer focus ring overlap each other when viewed from above,

at least a part of a bottom surface of the outer focus ring is mounted on a top surface of the side protection member, and

an outer periphery portion of a top surface of the outer focus ring is exposed to a processing space in the processing chamber.

17. The substrate processing apparatus of claim 16 ,

wherein the lifter is configured to come into contact with the bottom surface of the inner focus ring to lower and raise the inner focus ring.

18. The substrate processing apparatus of claim 16 ,

wherein plasma is generated in the processing chamber when the inner focus ring is at the raised position.

19. The substrate processing apparatus of claim 16 ,

wherein the susceptor has an electrostatic chuck on a surface thereof.