Material deposition prevention on a workpiece in a process chamber

1. A workpiece processing apparatus for processing a workpiece, comprising:

a plasma source configured to generate a plasma;

a chamber configured to receive the workpiece;

a workpiece support contained in the chamber and configured to support the workpiece;

a baseplate configured to support the workpiece support; and

a focus ring assembly, the focus ring assembly comprising:

a focus ring having an upper tier, a lower tier, and a side wall extending between the upper tier and the lower tier of the focus ring;

an outer ring adjacent to a side wall of the chamber;

an inner ring, the inner ring being positioned laterally in the ring assembly between the outer ring and the baseplate; and

an upper ring, the upper ring being positioned laterally in the ring assembly between the outer ring and the baseplate and being vertically positioned between the baseplate and the focus ring,

wherein an inner edge of the upper tier is separated a lateral distance of at least about 3 mm from an outer edge of the workpiece located on the workpiece support,

wherein an angle between the side wall and an upper surface of the lower tier is obtuse, wherein the side wall of the focus ring is laterally adjacent to at least a portion of a side wall of the workpiece located on the workpiece support,

wherein the outer ring is comprised of a first material, the inner ring is comprised of a second material, and the upper ring is comprised of a third material, at least the first material being different from the second material and the third material, and

wherein the outer ring is laterally spaced apart from the baseplate such that the outer ring does not contact the baseplate, the inner ring and the upper ring being positioned laterally between the outer ring and the baseplate;

wherein a top surface of the upper tier of the focus ring is substantially planar with a top surface of the workpiece.

2. The workpiece processing apparatus of claim 1 , wherein the lateral distance is at least about 6 mm.

3. The workpiece processing apparatus of claim 1 , wherein the lateral distance is in a range from at least about 7 mm to about 15 mm.

4. The workpiece processing apparatus of claim 1 , wherein the angle between the side wall and an upper surface of the lower tier is in the range from about 100 degrees to about 150 degrees.

5. The workpiece processing apparatus of claim 1 , wherein the focus ring comprises silicon.

6. The workpiece processing apparatus of claim 1 , wherein the focus ring comprises yttria.

7. The workpiece processing apparatus of claim 1 , wherein workpiece support comprises an electrostatic chuck bonded to the baseplate.

8. The workpiece processing apparatus of claim 1 , wherein the inner ring comprises quartz.

9. The workpiece processing apparatus of claim 1 , wherein the upper ring comprises quartz.

10. The workpiece processing apparatus of claim 1 , wherein the outer ring comprises an insulating material.

11. The workpiece processing apparatus of claim 1 , wherein the outer ring comprises yttria.

12. The workpiece processing apparatus of claim 1 , wherein an edge of the workpiece overhangs an edge of the workpiece support to define a gap between an upper surface of the lower tier of the focus ring and a bottom surface of the workpiece.

13. The workpiece processing apparatus of claim 12 , wherein the focus ring defines a viewing angle into the gap.

14. The workpiece processing apparatus of claim 1 , wherein the workpiece located on the workpiece support overhangs the workpiece support by at least 1.5 mm.

15. The workpiece processing apparatus of claim 14 , wherein the workpiece located on the workpiece support overhangs the workpiece support by up to 2 mm.

16. The workpiece processing apparatus of claim 1 , wherein the focus ring assembly is self-supported in the processing chamber relative to the workpiece support.