Method for dehydrating semiconductor structure and dehydrating method of the same

1. A method for dehydrating a semiconductor structure, comprising:

providing a semiconductive substrate;

forming a trench on the semiconductive substrate;

dispensing diluted fluoride into the trench;

dispensing deionized water into the trench subsequent to dispensing diluted fluoride;

dispensing isopropanol into the trench subsequent to dispensing deionized water;

dispensing an agent in liquid form into the trench subsequent to dispensing isopropanol;

solidifying the agent; and

dehydrating a surface in the trench by transforming the agent from solid form to vapor form.

2. The method of claim 1 , wherein solidifying the agent includes cooling the substrate.

3. The method of claim 1 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

4. The method of claim 2 , wherein cooling the substrate is performed by purging a coolant on a surface of the semiconductive substrate.

5. The method of claim 4 , wherein the surface is at an opposite side to the trench.

6. The method of claim 1 , further comprising spinning the substrate after solidifying the agent.

7. The method of claim 1 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under pressure 1 atm.

8. The method of claim 1 , wherein a saturated vapor pressure of the agent under pressure 1 atm and 5 degrees below the melting point is at least 1 kPa.

9. A method for dehydrating a semiconductor structure, comprising:

forming a semiconductive transistor, comprising:

providing a semiconductive substrate;

forming a plurality of semiconductive fins over the semiconductive substrate;

flowing an agent in spaces between the plurality of fins;

dispensing diluted fluoride into the trench;

dispensing deionized water into the trench subsequent to dispensing diluted fluoride;

dispensing isopropanol into the trench subsequent to dispensing deionized water;

solidifying the agent in the spaces; and

transforming the solidified agent into vapor.

10. The method of claim 9 , wherein a aspect ratio of the plurality of semiconductive fins is greater than 11.

11. The method of claim 9 , wherein a Young's modulus of the plurality of semiconductive fins is lower than 200 GPa.

12. The method of claim 9 , wherein a melting point of the agent is ranging from 0° C. to 25° C. under 1 atm.

13. The method of claim 12 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below the melting point of the agent.

14. The method of claim 13 , wherein solidifying the agent includes cooling the semiconductive substrate by purging a coolant on a surface of the semiconductive substrate.

15. A method for dehydrating a semiconductor structure, comprising:

providing a semiconductive substrate;

forming a trench array on the semiconductive substrate;

dispensing an agent in liquid form into the trench array;

dispensing diluted fluoride into the trench;

dispensing deionized water into the trench subsequent to dispensing diluted fluoride;

dispensing isopropanol into the trench subsequent to dispensing deionized water;

solidify the agent;

vaporizing the agent from solid form to vapor form inside a chamber; and

providing superheated hydrogen oxide steam in the chamber.

16. The method of claim 15 , wherein solidifying the agent is through lowering a temperature of the agent to at least 5 degrees below a melting point of the agent.

17. The method of claim 15 , wherein the saturated vapor pressure of the agent under 1 atm and 5 degrees below the melting point is at least 1 kPa.

18. The method of claim 15 , wherein vaporizing the agent includes lowering a partial vapor pressure of the agent in vapor form inside the chamber.

19. The method of claim 18 , wherein the agent in vapor form is exhausted from the chamber.

20. The method of claim 18 , wherein lowering the partial vapor pressure of the agent includes purging an inert gas into the chamber.