Magnetic random access memory and manufacturing method thereof

1. A method of manufacturing a semiconductor device, the method comprising:

forming a magnetic random access memory (MRAM) cell structure including a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode;

forming a first insulating cover layer over the MRAM cell structure;

forming a second insulating cover layer over the first insulating cover layer;

forming an interlayer dielectric (ILD) layer;

forming a contact opening in the ILD layer, thereby exposing the second insulating cover layer;

removing a part of the second insulating cover layer and a part of the first insulating cover layer, thereby exposing the top electrode; and

forming a conductive layer in the opening contacting the top electrode,

wherein the second insulating cover layer has an oxygen getter property.

2. The method of claim 1 , wherein the second insulating cover layer is made of a zirconium-based insulating material different from the first insulating cover layer.

3. The method of claim 2 , wherein the first insulating cover layer is one or more selected from the group consisting of silicon nitride, SiON and SiOCN.

4. The method of claim 2 , wherein the zirconium-based insulating material is one or more selected from the group consisting of ZrN, ZrC and ZrB 2 .

5. The method of claim 1 , wherein:

the ILD layer includes a bottom ILD layer and an upper ILD layer, and

the opening is formed by etching the upper ILD layer.

6. The method of claim 5 , wherein the upper ILD layer includes two or more dielectric layers.

7. The method of claim 6 , wherein the forming the ILD layer includes:

forming a dielectric material for the bottom ILD layer over the second insulating cover layer;

planarizing the dielectric material to expose the second insulating cover layer, thereby forming the bottom ILD layer; and

forming the two or more dielectric layers on the bottom ILD layer and the second insulating cover layer.

8. The method of claim 1 , further comprising forming a third insulating cover layer over the second insulating cover layer.

9. The method of claim 8 , wherein the third insulating cover layer is made of SiC.

10. A method of manufacturing a semiconductor device including a magnetic random access memory (MRAM) cell, the method comprising:

forming a first conductive layer over a first interlayer dielectric (ILD) layer;

forming a stacked layer for a magnetic tunnel junction (MTJ) stack over the first conductive layer;

forming a second conductive layer over the stacked layer;

patterning the second conductive layer, the stacked layer and the first conductive layer, thereby forming an MRAM cell structure including a bottom electrode formed by the first conductive layer, the magnetic tunnel junction (MTJ) stack and a top electrode formed by the second conductive layer;

forming a first insulating cover layer over the MRAM cell structure;

forming a second insulating cover layer over the first insulating cover layer;

forming a third insulating cover layer over the second insulating cover layer;

forming a second ILD layer;

forming a contact opening in the second ILD layer, thereby exposing the third insulating cover layer;

removing a part of the third insulating cover layer, a part of the second insulating cover layer and a part of the first insulating cover layer, thereby exposing the top electrode; and

forming a third conductive layer in the opening contacting the top electrode,

wherein the second insulating cover layer has an oxygen getter property.

11. The method of claim 10 , wherein after the patterning the second conductive layer, the stacked layer and the first conductive layer, the first ILD layer is partially recessed.

12. The method of claim 11 , wherein a bottom of the first insulating cover layer is located below a bottom of the bottom electrode.

13. The method of claim 12 , wherein the second insulating cover layer is made of ZrN.

14. The method of claim 13 , wherein the third insulating cover layer is made of SiC.

15. The method of claim 14 , wherein the first insulating cover layer is made of one or more selected from the group consisting of silicon nitride, SiON, SiCN, and SiOCN.

16. A method of manufacturing a semiconductor device, the method comprising:

forming a bottom electrode in a bottom interlayer dielectric (ILD) layer;

forming a film stack including a seed layer, a magnetic tunnel junction (MTJ) stack and a upper electrode layer;

patterning the upper electrode layer and the MTJ stack, thereby forming a patterned stack;

forming a first insulating cover layer over the seed layer and the patterned stack;

forming a second insulating cover layer over the first insulating cover layer;

patterning the second insulating cover layer, the first insulating cover layer and the seed layer, thereby forming a magnetic random access memory (MRAM) cell structure;

forming an upper ILD layer over the MRAM cell structure;

forming a contact opening in the ILD layer, thereby exposing the second insulating cover layer; and

forming a conductive layer in the opening contacting the top electrode,

wherein the second insulating cover layer has an oxygen getter property.

17. The method of claim 16 , wherein the second insulating cover layer is one or more selected from the group consisting of ZrN, ZrC and ZrB 2 .

18. The method of claim 17 , further comprising forming a third insulating cover layer over the second insulating cover layer,

wherein the third insulating layer is patterned such that the MRAM cell structure further includes a patterned third insulating cover layer.

19. The method of claim 18 , wherein the third insulating cover layer is SiC.

20. The method of claim 16 , wherein a width of the seed layer of the MRAM cell structure is greater than a width of the bottom electrode.