Electronic systems with through-substrate interconnects and MEMS device
Disclosed is a method of forming an interconnect in a substrate having a first surface and a second surface. The method includes forming an insulating structure abutting the first surface and defining a closed loop around a via in the substrate and forming an insulating region abutting the second surface such that the insulating region contacts the insulating structure and separates the via from a bulk region of the substrate. Forming the insulating structure includes etching the substrate beginning from the first surface to form a trench, filling the trench to form a seam portion, and converting a first portion of the substrate to a first solid portion to form the closed loop.
1. A method of forming an interconnect in a substrate having a first surface and a second surface, the method comprising:
forming an insulating structure abutting the first surface and defining a closed loop around a via in the substrate, the forming of the insulating structure comprising:
etching the substrate beginning from the first surface to form a trench having a first depth in the substrate and to form a first portion of the substrate having a first height between the first depth and the first surface;
filling the trench to form a seam portion, the seam portion having a first end and a second end opposite the first end; and
converting the first portion of the substrate to a first solid portion to form the closed loop, the first solid portion separating the first and second ends of the seam portion; and
forming an insulating region abutting the second surface such that the insulating region contacts the insulating structure and separates the via from a bulk region of the substrate,
wherein the filling and the converting comprises thermally oxidizing the substrate to grow a thermal oxide, and
wherein the filling and the converting occurs during the same processing step.
2. The method of claim 1 , further comprising:
disposing an insulating material in a lower portion of the insulating region, and over a first portion of the bulk region on the second surface; and
disposing a conductive material over the lower portion, the first portion of the bulk region, and a first portion of the via to form a pad region.
3. The method of claim 2 , wherein the pad region is greater than a cross-sectional area of the via along the second surface.
4. The method of claim 1 , wherein the etching the substrate beginning from the first surface to form the trench comprises reactive ion etching.
5. The method of claim 1 , wherein the thermal oxide is silicon dioxide.
6. The method of claim 1 , wherein the forming the insulating region abutting the second surface comprises reactive ion etching.
7. The method of claim 1 , further comprising converting a second portion of the substrate to a second solid portion to form the closed loop.
8. The method of claim 7 , wherein the converting the first portion of the substrate to the first solid portion to form the closed loop and the converting the second portion of the substrate to the second solid portion to form the closed loop occurs during the same processing step.
9. The method of claim 1 , wherein the forming the insulating region comprises forming a first insulating region portion abutting the insulating structure, and forming a second insulating region portion abutting the second surface and the first insulating region portion.
10. The method of claim 9 , wherein the forming the first insulating region portion comprises forming a gaseous-material-filled volume abutting the insulating structure, and
wherein the forming the second insulating region portion comprises forming a solid insulating layer abutting the gaseous-material-filled volume.
11. The method of claim 9 , further comprising forming a pad region over a portion of the via and the second insulating portion, and wherein the forming the second insulating region portion comprises forming the second insulating portion over a portion of the bulk region.
12. The method of claim 11 , wherein the pad region has a cross-sectional width greater than a cross-sectional width of the via.
13. The method of claim 1 , further comprising:
forming a conductive trace electrically connecting the via to a portion of the bulk region of the substrate; and
forming a micro-electromechanical system (MEMS) structure in the portion of the bulk region of the substrate,
wherein the portion of the bulk region is semiconducting.
14. The method of claim 1 , wherein the first portion of the substrate is a vertical pillar separating, in a plan view, a first end and a second end opposite the first end of the trench.
15. A method of forming an interconnect, the method comprising:
etching a first surface of a substrate to form a first trench having a first depth in the substrate and to form a first portion of the substrate having a first height between the first depth and the first surface adjacent a conductive portion of the substrate;
thermally oxidizing the substrate to (a) fill the first trench with an insulating oxide and (b) convert the first portion of the substrate adjacent an end of the first trench to a first solid insulating oxide portion, wherein the insulating oxide filling the first trench and the first solid insulating oxide portion form, at least in part, a closed loop insulating structure surrounding the conductive portion of the substrate, and wherein the insulating oxide filling the first trench and the first solid insulating oxide portion are formed during the same thermal oxidizing processing step; and
etching a second surface of the substrate to form an etched region surrounding the conductive portion of the substrate and to expose a surface of the closed loop insulating structure surrounding the conductive portion of the substrate, thereby electrically isolating the conductive portion of the substrate from a portion of the substrate outside the closed loop insulating structure.
16. The method of claim 15 , wherein etching the first surface of the substrate further comprises forming a second trench adjacent the conductive portion of the substrate;
wherein oxidizing the substrate further comprises (a) filling the second trench with the insulating oxide and (b) converting a second portion of the substrate adjacent an end of the second trench to a second solid insulating oxide portion; and
wherein the insulating oxide filling the first and second trenches, the first solid insulating oxide portion, and the second solid insulating oxide portion form, at least in part, the closed loop insulating structure surrounding the conductive portion of the substrate.
17. The method of claim 15 , further comprising:
forming a conductive trace electrically connecting the conductive portion of the substrate to the portion of the substrate outside the closed loop insulating structure; and
forming a MEMS structure in the portion of the substrate outside the closed loop insulating structure.
18. The method of claim 15 , wherein the first portion of the substrate is a vertical pillar separating, in a plan view, a first end and a second end opposite the first end of the first trench.