Multi-junction photoelectric conversion device and photoelectric conversion module

1. A multi-junction photoelectric conversion device comprising, in the following order from a light-receiving side:

a first photoelectric conversion unit;

an intermediate layer having an average refractive index n of 2.6 to 3.5; and

a second photoelectric conversion unit,

wherein the first photoelectric conversion unit comprises:

a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material;

a first charge transport layer on the light-receiving side of the first light absorbing layer; and

a second charge transport layer on a rear side of the first light absorbing layer,

wherein the second charge transport layer is in contact with the intermediate layer,

wherein the second photoelectric conversion unit comprises:

a second light absorbing layer that is a crystalline silicon substrate; and

a first conductive semiconductor layer that is in contact with the intermediate layer, and

wherein a refractive index n1 of the second charge transport layer, a refractive index n2 of the first conductive semiconductor layer and an average refractive index n of the intermediate layer satisfy the following relationships:

n 1< n<n 2;

n 2− n 1≥0.7; and

√( n 1× n 2)−0.5≤ n ≤√( n 1× n 2)+0.5.

2. The multi-junction photoelectric conversion device according to claim 1 , wherein a product of the average refractive index n and a thickness of the intermediate layer is 100 to 300 nm.

3. The multi-junction photoelectric conversion device according to claim 1 , wherein the first conductive semiconductor layer is a conductive silicon-based thin-film.

4. The multi-junction photoelectric conversion device according to claim 1 , wherein the intermediate layer comprises a silicon oxide layer.

5. The multi-junction photoelectric conversion device according to claim 4 , wherein the intermediate layer comprises a microcrystalline silicon oxide layer.

6. The multi-junction photoelectric conversion device according to claim 1 , wherein the intermediate layer consists of a single layer.

7. The multi-junction photoelectric conversion device according to claim 1 , wherein the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

8. The multi-junction photoelectric conversion device according to claim 1 , wherein the second photoelectric conversion unit comprises a second conductive semiconductor layer having a conductivity type different from that of the first conductive semiconductor layer on the rear side of the crystalline silicon substrate.

9. A photoelectric conversion module comprising the multi-junction photoelectric conversion device according to claim 1 .

10. A multi-junction photoelectric conversion device comprising, in the following order from a light-receiving side:

a first photoelectric conversion unit;

an intermediate layer having an average refractive index n of 2.6 to 3.5 and a thickness of 40 to 80 nm; and

a second photoelectric conversion unit,

wherein the first photoelectric conversion unit comprises:

a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material;

a first charge transport layer on the light-receiving side of the first light absorbing layer; and

a second charge transport layer on a rear side of the first light absorbing layer,

wherein the second charge transport layer is in contact with the intermediate layer,

wherein the second photoelectric conversion unit comprises:

a second light absorbing layer that is a crystalline silicon substrate; and

a first conductive semiconductor layer that is in contact with the intermediate layer, and

wherein a refractive index n1 of the second charge transport layer, a refractive index n2 of the first conductive semiconductor layer and an average refractive index n of the intermediate layer satisfy the following relationships:

n 1< n<n 2;

n 2− n 1≥0.7; and

√( n 1× n 2)−0.5≤ n ≤√( n 1× n 2)+0.5.

11. The multi-junction photoelectric conversion device according to claim 10 , wherein a product of the average refractive index n and a thickness of the intermediate layer is 100 to 300 nm.

12. The multi-junction photoelectric conversion device according to claim 10 , wherein the first conductive semiconductor layer is a conductive silicon-based thin-film.

13. The multi-junction photoelectric conversion device according to claim 10 , wherein the intermediate layer comprises a silicon oxide layer.

14. The multi-junction photoelectric conversion device according to claim 13 , wherein the intermediate layer comprises a microcrystalline silicon oxide layer.

15. The multi-junction photoelectric conversion device according to claim 10 , wherein the intermediate layer consists of a single layer.

16. The multi-junction photoelectric conversion device according to claim 10 , wherein the first charge transport layer is a hole transport layer, and the second charge transport layer is an electron transport layer.

17. The multi-junction photoelectric conversion device according to claim 10 , wherein the second photoelectric conversion unit comprises a second conductive semiconductor layer having a conductivity type different from that of the first conductive semiconductor layer on the rear side of the crystalline silicon substrate.

18. A photoelectric conversion module comprising the multi-junction photoelectric conversion device according to claim 10 .