Methods for removing particles from etching chamber
A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
1. An apparatus comprising:
a dry etching chamber comprising an inner surface;
an E-chuck in the dry etching chamber; and
a coating layer comprising SiClO x compound, with value x being 3 or 4, wherein the coating layer covers an upper portion of the inner surface of the dry etching chamber, with a lower portion of the inner surface of the dry etching chamber un-covered by the coating layer.
2. The apparatus of claim 1 further comprising a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor comprises a plurality of through-holes therein, wherein the un-covered lower portion of the inner surface of the dry etching chamber is lower than a top surface of the E-Chuck, and higher than the gas-flow re-distributor.
3. The apparatus of claim 1 , wherein the coating layer further comprises a metal and fluorine attached thereon to form Si—F-M bonds, with letter F representing fluorine, and letter M representing the metal.
4. The apparatus of claim 3 , wherein the coating layer forms Si—F—Al bonds with fluorine and aluminum atoms.
5. The apparatus of claim 1 , wherein thicknesses of the coating layer gradually reduce starting from substantially a same level as a top surface of the E-Chuck, with upper portions of a part of the coating layer lower than the top surface of the E-Chuck being thicker than respective lower portions.
6. The apparatus of claim 1 further comprising:
a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor separates the dry etching chamber into a top portion over the gas-flow re-distributor and a bottom portion under the gas-flow re-distributor, and wherein the gas-flow re-distributor comprises:
an inner edge encircling the E-Chuck;
an outer edge concentric with the inner edge; and
a plurality of through-holes between the inner edge and the outer edge, wherein the plurality of through-holes connect the top portion of the dry etching chamber to the bottom portion of the dry etching chamber.
7. The apparatus of claim 1 , wherein the lower portion of the inner surface of the dry etching chamber is exposed to an inner space of the dry etching chamber.
8. The apparatus of claim 1 , wherein the coating layer comprises SiClO 3 .
9. The apparatus of claim 1 , wherein the coating layer comprises SiClO 4 .
10. An apparatus comprising:
a dry etching chamber comprising an inner surface;
an E-chuck in the dry etching chamber; and
a coating layer comprising SiClO 3 , wherein the coating layer covers an upper portion of the inner surface of the dry etching chamber, with a lower portion of the inner surface of the dry etching chamber un-covered by the coating layer.
11. The apparatus of claim 10 further comprising a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor comprises a plurality of through-holes therein, wherein the un-covered lower portion of the inner surface of the dry etching chamber is lower than a top surface of the E-Chuck, and higher than the gas-flow re-distributor.
12. The apparatus of claim 10 , wherein the coating layer further comprises a metal and fluorine attached thereon to form Si—F-M bonds, with letter F representing fluorine, and letter M representing the metal.
13. The apparatus of claim 12 , wherein the coating layer forms Si—F—Al bonds with fluorine and aluminum atoms.
14. The apparatus of claim 10 , wherein thicknesses of the coating layer gradually reduce starting from substantially a same level as a top surface of the E-Chuck, with upper portions of a part of the coating layer lower than the top surface of the E-Chuck being thicker than respective lower portions.
15. The apparatus of claim 10 further comprising:
a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor separates the dry etching chamber into a top portion over the gas-flow re-distributor and a bottom portion under the gas-flow re-distributor, and wherein the gas-flow re-distributor comprises:
an inner edge encircling the E-Chuck;
an outer edge concentric with the inner edge; and
a plurality of through-holes between the inner edge and the outer edge, wherein the plurality of through-holes connect the top portion of the dry etching chamber to the bottom portion of the dry etching chamber.
16. The apparatus of claim 10 , wherein the lower portion of the inner surface of the dry etching chamber is exposed to an inner space of the dry etching chamber.
17. An apparatus comprising:
a dry etching chamber comprising an inner surface;
an E-chuck in the dry etching chamber; and
a coating layer comprising silicon, chlorine, and oxygen, wherein the coating layer covers an upper portion of the inner surface of the dry etching chamber, with a lower portion of the inner surface of the dry etching chamber un-covered by the coating layer, and wherein thicknesses of the coating layer gradually reduce starting from substantially a same level as a top surface of the E-Chuck, with upper portions of a part of the coating layer lower than the top surface of the E-Chuck being thicker than respective lower portions.
18. The Apparatus of claim 17 further comprising a gas-flow re-distributor located in the dry etching chamber, wherein the gas-flow re-distributor comprises a plurality of through-holes therein, wherein the un-covered lower portion of the inner surface of the dry etching chamber is lower than a top surface of the E-Chuck, and higher than the gas-flow re-distributor.
19. The apparatus of claim 17 , wherein the coating layer further comprises a metal and fluorine attached thereon to form Si—F-M bonds, with letter F representing fluorine, and letter M representing the metal.
20. The apparatus of claim 17 , wherein the coating layer comprises SiClOx, with X being equal to or greater than 1.