IP Library › Granted Patent US 10,390,145
Granted Patent B1
US 10,390,145 · App. 15/943,637 · Granted Aug 20, 2019

Micro electro mechanical system (MEMS) microphone

Inventors: Tsung-Min Hsieh (New Taipei, TW); Cheng-Wei Tsai (Taichung, TW); Chien-Hsing Lee (Hsinchu County, TW)
Assignee: Solid State System Co., Ltd.
H04R19/04B81C1/00158H04R1/083B81B2201/0257H04R2201/003
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Quick Facts
Patent No.
US 10,390,145
App. No.
15/943,637
Granted
Aug 20, 2019
Kind
B1
Abstract

A micro electro mechanical system (MEMS) microphone includes a substrate, having a substrate opening. A supporting dielectric layer is disposed on the substrate surrounding the substrate opening. A diaphragm is supported by the supporting dielectric layer above the substrate opening, wherein the diaphragm has a bowl-like structure being convex toward the substrate opening when the diaphragm is at an operation off state. A backplate is disposed on the supporting dielectric layer over the diaphragm, wherein the backplate includes a plurality of venting holes at a region corresponding to the substrate opening.

Claims (29)

1. A micro electro mechanical system (MEMS) microphone, comprising:

a substrate, having a substrate opening;

a supporting dielectric layer, disposed on the substrate surrounding the substrate opening;

a diaphragm, supported by the supporting dielectric layer above the substrate opening, wherein the diaphragm has a bowl-like structure bending as a convex shape toward the substrate opening when the diaphragm is at an operation off state, wherein the bowl-like structure has a central region and has a convex tip in the central region; and

a backplate, disposed on the supporting dielectric layer over the diaphragm, wherein the backplate comprises a plurality of venting holes at a region corresponding to the substrate opening.

2. The MEMS microphone of claim 1 , wherein the diaphragm is distant from the backplate by a first gap at a region supported by the supporting dielectric layer, and the convex tip of the convex shape of the diaphragm is distant from the backplate by a second gap, wherein the second gap is at least 5/4 times of the first gap.

3. The MEMS microphone of claim 2 , wherein the larger a diameter of the diaphragm, the larger the second gap is.

4. The MEMS microphone of claim 1 , wherein a periphery region of the diaphragm has a spring structure.

5. The MEMS microphone of claim 4 , wherein the spring structure is a meandering structure extending from a central region of the diaphragm to a sidewall of the supporting dielectric layer.

6. The MEMS microphone of claim 4 , wherein a peripheral region of the diaphragm has a plural of slit openings, so to form the spring structure.

7. The MEMS microphone of claim 1 , wherein the backplate comprises a passivation layer, a peripheral region of the passivation layer is disposed on the supporting dielectric layer.

8. The MEMS microphone of claim 1 , wherein the diaphragm is conductive.

9. The MEMS microphone of claim 8 , wherein the diaphragm is connected to a ground terminal and a conductive layer of the backplate corresponding to the substrate opening is connected to an operation voltage.

10. The MEMS microphone of claim 1 , wherein the diaphragm comprises a plurality of sublayers in stack to produce a stress force, so to form the bowl-like structure.

11. A micro electro mechanical system (MEMS) microphone, comprising:

a substrate, having a substrate opening;

a supporting dielectric layer, disposed on the substrate surrounding the substrate opening;

a backplate, supported by the supporting dielectric layer over the substrate opening, wherein the backplate comprises a plurality of venting holes at a region corresponding to the substrate opening;

a diaphragm, supported by the supporting dielectric layer over the backplate corresponding to the substrate opening, wherein the diaphragm has a bowl-like structure bending as a convex shape outward the substrate opening when the diaphragm is at an operation off state, wherein the bowl-like structure has a central region and has a convex tip in the central region; and

a passivation layer, disposed on the supporting dielectric layer and having an opening corresponding to the substrate opening.

12. The MEMS microphone of claim 11 , wherein the diaphragm is distant from the backplate by a first gap at a region supported by the supporting dielectric layer, and the convex tip of the convex shape of the diaphragm is distant from the backplate by a second gap, wherein the second gap is at least 5/4 times of the first gap.

13. The MEMS microphone of claim 12 , wherein the larger a diameter of the diaphragm, the larger the second gap is.

14. The MEMS microphone of claim 11 , wherein a periphery region of the diaphragm has a spring structure.

15. The MEMS microphone of claim 14 , wherein the spring structure is a meandering structure extending from a central region of the diaphragm to a sidewall of the supporting dielectric layer.

16. The MEMS microphone of claim 14 , wherein a peripheral region of the diaphragm has a plural of slit openings, so to form the spring structure.

17. The MEMS microphone of claim 11 , wherein the backplate comprises a passivation layer, a peripheral region of the passivation layer is disposed on the supporting dielectric layer.

18. The MEMS microphone of claim 11 , wherein the diaphragm is conductive.

19. The MEMS microphone of claim 18 , wherein the diaphragm is connected to a ground terminal and a conductive layer of the backplate corresponding to the substrate opening is connected to an operation voltage.

20. The MEMS microphone of claim 11 , wherein the diaphragm comprises a plurality of sublayers in stack to produce a stress force, so to form the bowl-like structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 2, 2018
From: HSIEH, TSUNG-MIN; TSAI, CHENG-WEI; LEE, CHIEN-HSING
To: SOLID STATE SYSTEM CO., LTD.
Reel/Frame 045415/0752 →
Cited By (2)
US 12,382,227 US 12,732,756