SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME
A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.
1 . A semiconductor device comprising:
a film comprising a corundum structure; and
a film comprising a hexagonal crystal structure and arranged directly or via a buffer layer on the film comprising the corundum structure.
2 . The semiconductor device of claim 1 , wherein the film comprising the corundum structure comprises gallium atoms.
3 . The semiconductor device of claim 1 , wherein the film comprising the corundum structure comprises indium atoms.
4 . The semiconductor device of claim 1 , wherein the film comprising the corundum structure is an oxide crystal layer.
5 . The semiconductor device of claim 1 , wherein the film comprising the corundum structure comprises α-gallium oxide.
6 . The semiconductor device of claim 1 , wherein the film comprising the hexagonal crystal structure is a group III nitride crystal layer.
7 . The semiconductor device of claim 6 , wherein the group III nitride crystal layer is oriented to one axis.
8 . The semiconductor device of claim 1 , wherein the film comprising the hexagonal crystal structure comprises a gallium nitride crystal.
9 . The semiconductor device of claim 1 , wherein the buffer layer on the film comprising the corundum structure is an iron oxide layer.
10 . The semiconductor device of claim 9 , wherein the buffer layer on the film comprising the corundum structure is the iron oxide layer in an amorphous phase.
11 . The semiconductor device of claim 1 ,
wherein the film comprising the corundum structure is defined as a first film, and
the film comprising the hexagonal crystal structure is defined as a second film, and
wherein the semiconductor device further comprises a third film that is a group III nitride crystal layer, and
the first film is sandwiched by the second film and the third film.
12 . The semiconductor device of claim 11 , wherein the first film is an oxide crystal layer.
13 . The semiconductor device of claim 11 , wherein the second film is a group III nitride crystal layer.
14 . The semiconductor device of claim 11 , wherein the third film comprises indium atoms.
15 . The semiconductor device of claim 11 , wherein the third film comprises gallium atoms.
16 . The semiconductor device of claim 12 , wherein the oxide crystal layer comprises gallium atoms and aluminum atoms.
17 . The semiconductor device of claim 16 , wherein the aluminum atoms are at least in interstices of a crystal lattice of the oxide crystal layer.
18 . The semiconductor device of claim 12 , wherein the oxide crystal layer comprises indium atoms and aluminum atoms.
19 . The semiconductor device of claim 18 , wherein the aluminum atoms are at least in interstices of a crystal lattice of the oxide crystal layer.
20 . A semiconductor device comprising:
an α-gallium oxide film; and
a gallium nitride layer arranged on the α-gallium oxide film.