IP Library › Patent Application 15945801
Patent Application
App. No. 15/945,801

PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM

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Quick Facts
Patent No.
US None
App. No.
15/945,801
Abstract

To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO 3 , wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb 2+ as A-site ions and containing Zr 4+ and Ti 4+ as B-site ions, and the A-site contains Bi 3+ as A-site compensation ions and the B-site contains Nb 5+ as B-site compensation ions.

Claims (10)

1 . A method for producing a ferroelectric film comprising the steps of:

preparing a sol-gel solution including a raw material solution including: a hydrolysis condensation polymerization of an alkoxide raw material including Pb, Bi, Nb, Zr and Ti and heteropolyacid; and polar solvents and unsaturated fatty acids;

coating said sol-gel solution on a substrate to form a coated film on said substrate;

subjecting said coated film to temporary burning at a temperature of 25 to 450° C. to form a ferroelectric material film on said substrate; and

heat-treating said ferroelectric material film at a temperature of 450 to 800° C. to produce a ferroelectric film including a perovskite-structured ferroelectric substance obtained by crystallizing said ferroelectric material film.

2 . The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film is a PBNZT ferroelectric film comprising a perovskite-structured ferroelectric substance represented by (Pb 1-X Bi X )((TiZr) 1-Y Nb Y )O 3 , wherein:

X is 0.05 to 0.1; and

Y is 0.05 to 0.1.

3 . The method for producing a ferroelectric film according to claim 1 , wherein said ferroelectric film has a relative permittivity of 400 or more.

4 . A ferroelectric film being formed by the method for producing a ferroelectric film according to claim 3 and having a relative permittivity of 400 or more.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jul 1, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: UMI I INVESTMENT LIMITED PARTNERSHIP
Reel/Frame 060572/0037 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: KRYSTAL INC.
Reel/Frame 060572/0227 →
SECURITY INTEREST Recorded Jan 25, 2022
From: ADVANCED MATERIAL TECHNOLOGIES, INC.
To: UMI I INVESTMENT LIMITED PARTNERSHIP
Reel/Frame 058763/0517 →
CHANGE OF NAME Recorded Sep 19, 2018
From: YOUTEC CO., LTD.
To: ADVANCED MATERIAL TECHNOLOGIES, INC.
Reel/Frame 047105/0299 →