Method for manufacturing a device for forming at least one focused beam in a near zone

1. A method for manufacturing a device that forms at least one focused beam in a near zone, from an electromagnetic wave incident on the device, the method comprising:

depositing a dielectric material layer with a first refractive index on a substrate layer;

forming at least one cavity by a microfabrication technique in the dielectric material layer deposited on the substrate layer;

filling the at least one cavity with a material having a second refractive index lower than the first refractive index, wherein the device comprises the substrate layer and the dielectric material layer having the at least one cavity filled with the material;

determining a deviation between a measured radiation angle of a near-zone focused beam obtained from the device and an expected focused beam radiation angle; and

modifying locally at least one of the first refractive index and the second refractive index to adjust a radiation angle of the near-zone focused beam to reduce the determined deviation.

2. The method for manufacturing according to claim 1 , wherein the microfabrication technique is selected from the group consisting of optical lithography and e-beam lithography.

3. The method for manufacturing according to claim 1 , further comprising depositing a superstrate layer on the dielectric material layer.

4. The method for manufacturing according to claim 1 , wherein the at least one cavity is a through-hole in the dielectric material layer.

5. The method for manufacturing according to claim 1 , wherein the at least one cavity surrounds an element within the dielectric material layer.

6. The method for manufacturing according to claim 1 , wherein the at least one cavity is targeted to be cylindrical or cone-shaped.

7. The method of claim 1 , wherein when the measured radiation angle of the near-zone focused beam is to be decreased, locally doping the dielectric material layer to increase the value of a first dielectric index of the dielectric material layer.

8. The method of claim 1 , wherein when the measured radiation angle of the near-zone focused beam is to be increased, locally doping the material filling the at least one cavity to increase the value of a second dielectric index of the material.

9. The method of claim 1 , wherein the at least one cavity is configured such that the near-zone focused beam is formed by the device in response to the incident electromagnetic wave.

10. The method of claim 1 , wherein, when the determined deviation is positive, the modifying comprises locally doping the dielectric material layer to modify a value of the first refractive index of the dielectric material layer.

11. The method of claim 1 , wherein, when the determined deviation is negative, the modifying comprises locally doping the material filling the at least one cavity to modify a value of the second refractive index of the material.

12. The method of claim 1 , wherein the modifying comprises using at least one technique selected from the group consisting of neutron irradiation, chemical vapor deposition, and partial polymerization.

13. The method of claim 1 , wherein the radiation angle of the near-zone focused beam is a direction at which the near-zone focused beam is directed.

14. The method of claim 1 , wherein the radiation angle of the near-zone focused beam is an angle between the dielectric material layer and a direction of the near-zone focused beam.