Piezo-actuated MEMS resonator with surface electrodes

1. A microelectromechanical system (MEMS) resonator comprising:

a degenerately-doped single-crystal silicon layer;

a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer; and

an electrically-conductive material layer (i) disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and (ii) patterned to form first and second electrodes that are electrically isolated from one another;

wherein the conductive material layer comprises heavily doped polysilicon.

2. The MEMS resonator of claim/wherein a resonator axis along which the MEMS resonator exhibits a predominant motion during resonant oscillation is offset from a dominant crystallographic axis of the degenerately-doped single-crystal silicon layer by an angle that substantially reduces at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the MEMS resonator relative to first- and/or second-order TCFs that would result without angular offset between the resonator axis and the dominant crystallographic axis.

3. The MEMS resonator of claim/wherein the degenerately-doped single-crystal silicon layer and the piezoelectric material layer have respective thicknesses in a predetermined ratio that attenuates at least one temperature coefficient of frequency of the MEMS resonator.

4. The MEMS resonator of claim 1 wherein at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the degenerately-doped single-crystal silicon layer and the piezoelectric material layer are opposite in sign over at least part of an operating temperature range.

5. A microelectromechanical system (MEMS) resonator comprising:

a degenerately-doped single-crystal silicon layer;

a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer; and

an electrically-conductive material layer (i) disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and (ii) patterned to form first and second electrodes that are electrically isolated from one another;

wherein at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the degenerately-doped single-crystal silicon layer and the piezoelectric material layer are opposite in sign over at least part of an operating temperature range.

6. The MEMS resonator of claim 5 wherein the conductive material layer comprises metal.

7. The MEMS resonator of claim 5 wherein the piezoelectric material layer comprises aluminum nitride.

8. The MEMS resonator of claim/wherein a resonator axis along which the MEMS resonator exhibits a predominant motion during resonant oscillation is offset from a dominant crystallographic axis of the degenerately-doped single-crystal silicon layer by an angle that substantially reduces at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the MEMS resonator relative to first- and/or second-order TCFs that would result without angular offset between the resonator axis and the dominant crystallographic axis.

9. The MEMS resonator of claim/wherein the degenerately-doped single-crystal silicon layer and the piezoelectric material layer have respective thicknesses in a predetermined ratio that attenuates at least one temperature coefficient of frequency of the MEMS resonator.

10. A microelectromechanical system (MEMS) resonator comprising:

a degenerately-doped single-crystal silicon layer;

a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer; and

an electrically-conductive material layer (i) disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and (ii) patterned to form first and second electrodes that are electrically isolated from one another;

wherein a resonator axis along which the MEMS resonator exhibits a predominant motion during resonant oscillation is offset from a dominant crystallographic axis of the degenerately-doped single-crystal silicon layer by an angle that substantially reduces at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the MEMS resonator relative to first- and/or second-order TCFs that would result without angular offset between the resonator axis and the dominant crystallographic axis.

11. The MEMS resonator structure of claim 10 wherein the first electrode constitutes a drive electrode for driving the MEMS resonator into mechanically resonant oscillation, wherein the second electrode comprises a sense electrode for sensing the mechanically resonant oscillation of the MEMS resonator, and wherein the degenerately-doped single crystal silicon layer constitutes a third electrode.

12. The MEMS resonator of claim 10 wherein the first electrode constitutes a drive electrode for driving the MEMS resonator into mechanically resonant oscillation, wherein the second electrode comprises a sense electrode for sensing the mechanically resonant oscillation of the MEMS resonator, and wherein the degenerately-doped single crystal silicon layer constitutes a third electrode.

13. The MEMS resonator of claim/wherein the degenerately-doped single-crystal silicon layer and the piezoelectric material layer have respective thicknesses in a predetermined ratio that attenuates at least one temperature coefficient of frequency of the MEMS resonator.

14. A microelectromechanical system (MEMS) resonator comprising:

a degenerately-doped single-crystal silicon layer;

a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer; and

an electrically-conductive material layer (i) disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and (ii) patterned to form first and second electrodes that are electrically isolated from one another;

wherein the degenerately-doped single-crystal silicon layer and the piezoelectric material layer have respective thicknesses in a predetermined ratio that attenuates at least one temperature coefficient of frequency of the MEMS resonator.

15. The MEMS resonator of claim/wherein the first electrode constitutes a drive electrode for driving the MEMS resonator into mechanically resonant oscillation, wherein the second electrode comprises a sense electrode for sensing the mechanically resonant oscillation of the MEMS resonator, and wherein the degenerately-doped single crystal silicon layer constitutes a third electrode.

16. A microelectromechanical system (MEMS) resonator comprising:

a degenerately-doped single-crystal silicon layer;

a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer; and

an electrically-conductive material layer (i) disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and (ii patterned to form first and second electrodes that are electrically isolated from one another;

wherein first-order and second-order temperature coefficients of frequency (TCFs) of the MEMS resonator and at least one TCF of the MEMS resonator beyond second-order are substantially attenuated by virtue of (i) angular offset between a dominant crystallographic axis of the degenerately-doped single-crystal silicon layer and a resonator axis along which the MEMS resonator exhibits a predominant motion during resonant oscillation, (ii) a chosen dopant concentration of the degenerately-doped single-crystal silicon layer and (iii) chosen relative thicknesses of the degenerately-doped single-crystal silicon layer and piezoelectric material layer.

17. A method of fabricating microelectromechanical system (MEMS) resonator, the method comprising:

disposing a piezoelectric material layer on a degenerately-doped single-crystal silicon layer;

disposing an electrically-conductive material layer on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer; and

patterning the electrically-conductive material layer to form first and second electrodes that are electrically isolated from one another;

wherein degenerately doping the single-crystal silicon substrate to form the degenerately-doped single-crystal silicon layer comprises doping the single-crystal silicon substrate with impurity concentration sufficient to form, as at least part of the degenerately-doped single-crystal-silicon layer, a third electrode.

18. The method of claim 17 wherein patterning the electrically-conductive material layer to form the first and second electrodes wherein the first electrode comprises:

patterning a drive electrode for driving the MEMS resonator into mechanically resonant oscillation; and

patterning a sense electrode for sensing the mechanically resonant oscillation of the MEMS resonator.

19. The method of claim 17 wherein disposing the electrically-conductive material layer on the piezoelectric material layer comprises disposing a metal layer on the piezoelectric material layer.

20. A method of fabricating microelectromechanical system (MEMS) resonator, the method comprising:

disposing a piezoelectric material layer on a degenerately-doped single-crystal silicon layer:

disposing an electrically-conductive material layer on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer; and

patterning the electrically-conductive material layer to form first and second electrodes that are electrically isolated from one another;

wherein disposing the electrically-conductive material layer on the piezoelectric material layer comprises disposing a heavily doped polysilicon layer on the piezoelectric material layer.

21. A method of fabricating microelectromechanical system (MEMS) resonator, the method comprising:

disposing a piezoelectric material layer on a degenerately-doped single-crystal silicon layer;

disposing an electrically-conductive material layer on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer; and

patterning the electrically-conductive material layer to form first and second electrodes that are electrically isolated from one another;

wherein the method further comprises offsetting a resonator axis along which the MEMS resonator exhibits a predominant motion during resonant oscillation from a dominant crystallographic axis of the degenerately-doped single-crystal silicon layer by an angle that substantially reduces at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the MEMS resonator relative to first-and/or second-order TCFs that would result without angular offset between the resonator axis and the dominant crystallographic axis.

22. The method of claim 21 wherein disposing the piezoelectric material layer on the degenerately-doped single-crystal silicon layer comprises forming the piezoelectric material layer with a thickness that yields a predetermined thickness ratio between the piezoelectric material layer and degenerately-doped single-crystal silicon layer that attenuates at least one temperature coefficient of frequency of the MEMS resonator.

23. A method of fabricating microelectromechanical system (MEMS) resonator, the method comprising:

disposing a piezoelectric material layer on a degenerately-doped single-crystal silicon layer:

disposing an electrically-conductive material layer on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer; and

patterning the electrically-conductive material layer to form first and second electrodes that are electrically isolated from one another;

wherein disposing the piezoelectric material layer on the degenerately-doped single-crystal silicon layer comprises disposing an aluminum nitride layer on the degenerately-doped single-crystal silicon layer.

24. The method of claim 23 wherein degenerately doping the single-crystal silicon substrate to form the degenerately-doped single-crystal silicon layer comprises doping the single-crystal silicon substrate with dopant in a manner that causes at least one of first-order or second-order temperature coefficients of frequency (TCFs) of the degenerately-doped single-crystal silicon layer and the piezoelectric material layer to be opposite in sign over at least part of an operating temperature range.

25. A method of fabricating microelectromechanical system (MEMS) resonator, the method comprising:

disposing a piezoelectric material layer on a degenerately-doped single-crystal silicon layer;

disposing an electrically-conductive material layer on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer; and

patterning the electrically-conductive material layer to form first and second electrodes that are electrically isolated from one another;

wherein disposing the piezoelectric material layer on the degenerately-doped single-crystal silicon layer comprises forming the piezoelectric material layer with a thickness that yields a predetermined thickness ratio between the piezoelectric material layer and degenerately-doped single-crystal silicon layer that attenuates at least one temperature coefficient of frequency of the MEMS resonator.