Conductive paste composition and semiconductor devices made therewith

1. A paste composition for use in forming a conductive structure situated on a semiconductor substrate having an insulating layer on a major surface thereof, the paste composition comprising:

an inorganic solids portion that comprises:

(a) 93 to 99% by weight of the solids of a source of electrically conductive metal, and

(b) 1 to 7% by weight of the solids of an oxide-based fusible material, and

an organic vehicle in which the constituents of the inorganic solids portion are dispersed,

wherein the oxide-based fusible material comprises, by cation percent of the oxides:

20 to 35% PbO,

35 to 48% TeO 2 ,

5 to 12% Bi 2 O 3 ,

3.5 to 6.5% WO 3 ,

0 to 2% B 2 O 3 ,

10 to 20% Li 2 O, and

0.5 to 8% Na 2 O,

with the proviso that a ratio of the cation percentage of TeO 2 to the cation percentage of WO 3 in the fusible material ranges from 7.5:1 to 10:1,

and wherein the paste composition, when deposited on the insulating layer and fired, is capable of penetrating the insulating layer and forming the conductive structure electrically connected to the semiconductor substrate.

2. The paste composition of claim 1 , wherein the electrically conductive metal comprises silver.

3. The paste composition of claim 1 , wherein the oxide-based fusible material further comprises at least one of TiO 2 , SiO 2 , K 2 O, Rb 2 O, Cs 2 O, Al 2 O 3 , MgO, CaO, SrO, BaO, V 2 O 5 , ZrO 2 , HfO 2 , MoO 3 , Ta 2 O 5 , RuO 2 , Mn 2 O 3 , Ag 2 O, ZnO, Ga 2 O 3 , GeO 2 , In 2 O 3 , SnO 2 , Sb 2 O 3 , P 2 O 5 , CuO, NiO, Cr 2 O 3 , Fe 2 O 3 , CoO, Co 2 O 3 , Co 3 O 4 , Y 2 O 3 , the lanthanide oxides, or a mixture thereof.

4. The paste composition of claim 1 , wherein the oxide-based fusible material comprises a combination of at least two powders having different compositions.

5. The paste composition of claim 1 , further comprising a discrete oxide additive.

6. The paste composition of claim 1 , wherein the semiconductor substrate is configured to be formed into a photovoltaic device having a lightly doped n-type emitter in the major surface and a p-type base.

7. The paste composition of claim 1 , wherein the lightly doped n-type emitter has a surface P dopant concentration of less than 3×10 20 atoms/cm 3 .

8. A process for forming a conductive structure, comprising:

(a) providing a semiconductor substrate having first and second major surfaces and a first insulating layer situated on the first major surface;

(b) applying a paste composition as recited by claim 1 onto at least a portion of the first insulating layer, and

(c) firing the semiconductor substrate, the first insulating layer, and the paste composition, such that the first insulating layer is penetrated, the conductive structure is formed, and an electrical connection is established between the conductive structure and the semiconductor substrate.

9. The process of claim 8 , wherein the semiconductor substrate is configured to be formed into a device having a lightly doped n-type emitter presented at the first major surface and a p-type base presented at the second major surface.

10. The process of claim 9 , wherein the lightly doped emitter comprises P-doped Si in which a bulk concentration of P atoms is less than 3×10 20 atoms/cm 3 .

11. The process of claim 8 , wherein the semiconductor substrate further comprises a second insulating layer situated on the second major surface, a portion of the second insulating layer defining a patterned opening region is removed, an aluminum-containing paste composition is applied onto the second insulating layer, and during the firing, aluminum from the paste composition interacts with silicon to produce a localized back surface field in the patterned opening region, whereby a second conductive structure is formed and an electrical connection is established between the second conductive structure and the semiconductor substrate at the second major surface.

12. The process of claim 11 , wherein the aluminum-containing paste composition is applied onto substantially all the second insulating layer.

13. A conductive structure made by the process of claim 8 .

14. A conductive structure made by the process of claim 9 .

15. A conductive structure made by the process of claim 10 .