Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium
There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
1. A substrate-processing apparatus, comprising:
a process chamber in which a substrate is processed;
a supply system configured to supply gases to the substrate in the process chamber; and
a controller configured to control the supply system so as to:
after the substrate with an oxide film formed on a surface of the substrate is prepared, perform a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by either:
(a) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
(b) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
(c) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
form a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by either:
(a) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or
(b) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or
(c) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
after forming the nitride film containing carbon, heat-processing the substrate under a temperature higher than a temperature of the substrate in the forming the nitride film containing carbon;
wherein a concave portion is formed in the surface of the substrate, and the oxide film is formed on an inner surface of the concave portion,
wherein, in the forming the nitride film containing carbon, the nitride film containing carbon is formed to fill an interior of the concave portion in which the oxide film is formed.
2. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform, in a process chamber of the substrate processing apparatus, a process of:
preparing a substrate with an oxide film formed on a surface of the substrate;
performing a pre-processing to form a nitride layer containing oxygen and carbon on a surface of the oxide film by using the oxide film as an oxygen source, and by either:
(a) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
(b) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate; and
supplying a gas containing carbon and nitrogen to the substrate, or
(c) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
forming a nitride film containing carbon on the surface of the oxide film on which the pre-processing has been performed, by either:
(a) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas to the substrate;
supplying a carbon-containing gas to the substrate; and
supplying a nitrogen-containing gas to the substrate, or
(b) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or
(c) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
supplying a precursor gas containing carbon to the substrate; and
supplying a nitrogen-containing gas to the substrate; and
after forming the nitride film containing carbon, heat-processing the substrate under a temperature higher than a temperature of the substrate in the forming the nitride film containing carbon:
wherein a concave portion is formed in the surface of the substrate, and the oxide film is formed on an inner surface of the concave portion,
wherein, in the forming the nitride film containing carbon, the nitride film containing carbon is formed to fill an interior of the concave portion in which the oxide film is formed.