Light emitting element, light emitting device, and electronic apparatus
An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.
1. A light emitting element comprising:
a first electrode;
a light emitting function layer that is formed on the first electrode;
an electron injection layer formed on and being in direct contact with the light emitting function layer;
a second electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity; and
an adsorption layer that is formed on, and in direct contact with, the second electrode,
wherein the second electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more.
2. The light emitting element according to claim 1 ,
wherein a material of the adsorption layer is the same material as the reductive material.
3. An electronic apparatus comprising:
the light emitting device according to claim 2 .
4. The light emitting element according to claim 1 ,
wherein the material of the adsorption layer is Mg or Al.
5. An electronic apparatus comprising:
the light emitting device according to claim 4 .
6. The light emitting element according to claim 1 ,
wherein a light absorption rate of the adsorption layer is 30% or less.
7. An electronic apparatus comprising:
the light emitting device according to claim 6 .
8. The light emitting element according to claim 1 ,
wherein a thickness of the adsorption layer being 1 nm or more.
9. An electronic apparatus comprising:
the light emitting device according to claim 8 .
10. The light emitting element according to claim 8 ,
wherein the thickness of the adsorption layer is thinner than a thickness of the second electrode.
11. An electronic apparatus comprising:
the light emitting device according to claim 10 .
12. The light emitting element according to claim 1 ,
wherein Ag that is contained in the second electrode has atomic ratio of 98% or less.
13. An electronic apparatus comprising:
the light emitting device according to claim 12 .
14. A light emitting device,
wherein the light emitting element according to claim 1 is provided in each pixel, and
a sealing layer is proved that is formed to cover the light emitting element.
15. The light emitting device according to claim 14 ,
wherein the sealing layer includes
a first sealing layer,
a flattening layer made from an organic material that is laminated on the first sealing layer, and
a second sealing layer that is laminated on the flattening layer.
16. The light emitting device according to claim 14 ,
wherein arrangement pitch of the pixels is 10 μm or less.
17. An electronic apparatus comprising:
the light emitting device according to claim 14 .
18. An electronic apparatus comprising:
the light emitting device according to claim 1 .
19. The light emitting element according to claim 1 , further comprising:
a color filter; and
a sealing layer provided between the absorption layer and the color filter and on the adsorption layer.
20. The light emitting element according to claim 1 , wherein:
the light emitting function layer includes an electron transport layer.