Semiconductor device, semiconductor wafer and semiconductor device manufacturing method

1. A semiconductor device, comprising:

a semiconductor substrate having a first surface and a second surface opposite to the first surface, wherein a diffusion region is formed in the semiconductor substrate;

a conductive pattern formed on the first surface and electrically connected with the diffusion region; and

a peripheral protrusion formed at a peripheral portion of the second surface and protruding outwardly along a thickness direction.

2. The semiconductor device of claim 1 , wherein the second surface with the peripheral protrusion is covered by a back metal.

3. A semiconductor wafer, comprising:

a semiconductor substrate, wherein a plurality of semiconductor device portions is arranged in matrix on the semiconductor substrate;

a first surface, wherein a conductive pattern is disposed on the first surface and electrically connected with a diffusion region formed in the semiconductor device portion;

a second surface opposite to the first surface; and

a rib-shaped portion, formed on the second surface corresponding to a region between the semiconductor device portions, protruding outwardly along a thickness direction and formed in a lattice shape as a whole.

4. The semiconductor wafer of claim 3 , wherein the second surface with the rib-shaped portion is covered by a back metal.

5. A semiconductor device manufacturing method, comprising:

a preparation step of preparing a semiconductor wafer, comprising:

arranging a plurality of semiconductor device portions in matrix on a semiconductor substrate;

disposing a conductive pattern on a first surface wherein the conductive pattern is electrically connected with a diffusion region formed in the semiconductor device portion; and

providing a second surface opposite to the first surface;

a removal step of removing a thickness part of the semiconductor wafer corresponding to the semiconductor device portion from the second surface; and

a cutting step of cutting the semiconductor wafer into the semiconductor device portion,

in the removal step, a rib-shaped portion protruding outwardly along a thickness direction is formed on the second surface corresponding to a region between the semiconductor device portions,

in the cutting step, cutting the semiconductor wafer along the rib-shaped portion.

6. The semiconductor device manufacturing method of claim 5 , wherein in the removal step, a thickness of a peripheral portion of the semiconductor wafer is kept.

7. The semiconductor device manufacturing method of claim 5 , wherein in the removal step, under a condition that the first surface of the semiconductor wafer is adhered with a first tape, the second surface of the semiconductor wafer is pushed and grinded by a grinder, and the semiconductor wafer corresponding to a region between the semiconductor device portions is deformed toward the first surface to form the rib-shaped portion on the second surface corresponding to the region between the semiconductor device portions.

8. The semiconductor device manufacturing method of claim 7 , wherein in the cutting step, the semiconductor wafer is cut under the condition that the first surface of the semiconductor wafer is adhered with the first tape.

9. The semiconductor device manufacturing method of claim 8 , wherein in the cutting step, the semiconductor wafer is cut under the condition that the first tape is adhered with a second tape.

10. The semiconductor device manufacturing method of claim 6 , wherein in the removal step, under a condition that the first surface of the semiconductor wafer is adhered with a first tape, the second surface of the semiconductor wafer is pushed and grinded by a grinder, and the semiconductor wafer corresponding to a region between the semiconductor device portions is deformed toward the first surface to form the rib-shaped portion on the second surface corresponding to the region between the semiconductor device portions.