IP Library Granted Patent US 10,177,086
Granted Patent B2
US 10,177,086 · App. 15/952,935 · Granted Jan 8, 2019

Microelectronic components with features wrapping around protrusions of conductive vias protruding from through-holes passing through substrates

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Charles G. Woychik (San Jose, CA); Arkalgud R. Sitaram (Cupertino, CA); Hong Shen (Palo Alto, CA); Zhuowen Sun (Campbell, CA); Liang Wang (Milpitas, CA); Guilian Gao (San Jose, CA)
Assignee: Invensas Corporation
H01L23/5223H01L21/76802H01L21/76877H01L21/823431H01L21/823475H01L23/5226H01L28/60H01L2924/0002
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Quick Facts
Patent No.
US 10,177,086
App. No.
15/952,935
Granted
Jan 8, 2019
Kind
B2
Abstract

In a microelectronic component having conductive vias ( 114 ) passing through a substrate ( 104 ) and protruding above the substrate, conductive features ( 120 E.A, 120 E.B) are provided above the substrate that wrap around the conductive vias' protrusions ( 114 ′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

Claims (40)

1. A microelectronic component comprising:

a substrate comprising a plurality of first through-holes;

a plurality of conductive vias, each conductive via comprising a portion inside a corresponding first through-hole, and comprising a conductive protrusion protruding upward from the corresponding first through-hole;

for each conductive protrusion:

(a) a first dielectric region wrapping around the conductive protrusion and covering the corresponding first through-hole adjacent to the conductive protrusion; and

(b) a first conductive sleeve region wrapping around the conductive protrusion, the first conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region;

wherein the microelectronic component comprises one or more capacitors each of which has a capacitor plate comprising at least a part of at least one first conductive sleeve region and has at least one other capacitor plate; and

the microelectronic component further comprises an interconnect layer overlying the substrate and the conductive protrusions, the interconnect layer comprising:

a dielectric;

a plurality of contact pads overlying the dielectric; and

one or more conductive interconnects passing through the dielectric and connecting at least one contact pad to at least one capacitor plate of the one or more capacitors.

2. The microelectronic component of claim 1 wherein the one or more conductive interconnects connect at least one contact pad to at least one first conductive sleeve region.

3. The microelectronic component of claim 1 wherein the one or more conductive interconnects connect at least one contact pad to at least one conductive protrusion.

4. The microelectronic component of claim 1 further comprising, for at least one conductive protrusion:

a second dielectric region wrapping around the corresponding first dielectric region; and

a second conductive sleeve region wrapping around the conductive protrusion and the corresponding first conductive sleeve region, the second conductive sleeve region being separated from the corresponding first dielectric sleeve region by the corresponding second dielectric region;

wherein the one or more conductive interconnects connect at least one contact pad to at least one second conductive sleeve region.

5. The microelectronic component of claim 4 wherein said at least one second conductive sleeve region comprises at least part of at least one said capacitor plate.

6. The microelectronic component of claim 1 wherein for at least one contact pad connected by the one or more conductive interconnects to at least one capacitor plate, the contact pad is laterally shifted relative to the capacitor plate.

7. The microelectronic component of claim 1 wherein the interconnect layer is formed on a polished surface.

8. The microelectronic component of claim 1 further comprising a dielectric surface between the first conductive sleeve regions, the dielectric surface being at least as high as top surfaces of the conductive protrusions and the first conductive sleeve regions, the dielectric surface underlying the interconnect layer.

9. The microelectronic component of claim 1 wherein each conductive via passes through the corresponding through-hole and is electrically connected to a circuit element below the substrate.

10. The microelectronic component of claim 1 wherein at least one said contact pad can be later attached to a contact pad of an integrated circuit or a printed circuit board.

11. The microelectronic component of claim 1 wherein at least one said contact pad is attached to a contact pad of an integrated circuit or a printed circuit board.

12. A microelectronic component comprising:

a substrate comprising one or more first through-holes;

one or more conductive vias, each conductive via comprising a portion inside a corresponding first through-hole, and comprising a conductive protrusion protruding from the corresponding first through-hole;

for each conductive protrusion:

a first dielectric region wrapping around the conductive protrusion and covering the corresponding first through-hole adjacent to the conductive protrusion;

a first conductive sleeve region wrapping around the conductive protrusion, the first conductive sleeve region being separated from the corresponding first through-hole and the conductive protrusion by the corresponding first dielectric region;

a second dielectric region wrapping around the corresponding first dielectric region; and

a second conductive sleeve region wrapping around the conductive protrusion, the corresponding first dielectric region, and the corresponding first conductive sleeve region;

wherein the microelectronic component further comprises an interconnect layer overlying the substrate and the conductive protrusions, the interconnect layer comprising:

a dielectric;

a plurality of contact pads overlying the dielectric; and

one or more conductive interconnects passing through the dielectric and connecting at least one contact pad to at least one of said: (a) conductive protrusion; (b) first conductive sleeve region; (c) second conductive sleeve region.

13. The microelectronic component of claim 12 wherein the one or more conductive interconnects connect at least one contact pad to at least one second conductive sleeve region.

14. The microelectronic component of claim 13 wherein for at least one contact pad connected by the one or more conductive interconnects to at least one second sleeve region, the contact pad is laterally shifted relative to the second conductive sleeve region.

15. The microelectronic component of claim 12 wherein each conductive via passes through the corresponding first through-hole and provides a conductive path between a circuit element below the substrate and a circuit element above the substrate.

16. The microelectronic component of claim 12 wherein at least one said contact pad is attached to a contact pad of an integrated circuit or a printed circuit board.

Assignments (4)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073508/0668 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0751 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2018
From: UZOH, CYPRIAN EMEKA; WOYCHIK, CHARLES G.; SITARAM, ARKALGUD R.; SHEN, HONG; SUN, ZHUOWEN; WANG, LIANG; GAO, GUILIAN
To: INVENSAS CORPORATION
Reel/Frame 045538/0949 →
Continuity (4)
Continuation 15619160 · Jun 9, 2017
Continuation 15200554 · Jul 1, 2016
Continuation 14633746 · Feb 27, 2015
Related Publication 20180233447A1 · Aug 16, 2018