Silicon ingot
A silicon ingot has opposite ends. A specific resistance, measured along an axis between the opposite ends of the silicon ingot, has at least one point of inflection where a concavity of the specific resistance changes along the axis. According to another embodiment, a silicon ingot has a first ingot part and a second ingot part between opposite ends of the silicon ingot. The first ingot part has a different specific resistance than the second ingot part. In a region of the silicon ingot between the first and second ingot parts, the specific resistance has at least one point of inflection where a concavity of the specific resistance changes.
1. A silicon ingot, comprising a first ingot part and a second ingot part between opposite ends of the silicon ingot, wherein the first ingot part has a different specific resistance than the second ingot part, wherein in a region of the silicon ingot between the first and second ingot parts, the specific resistance has at least one point of inflection where a concavity of the specific resistance changes, wherein the silicon ingot is doped with both p-type dopant material and n-type dopant material, wherein the p-type dopant material is at least one of boron, aluminum and gallium, and wherein the n-type dopant material is at least one of phosphorus, antimony and arsenic.
2. The silicon ingot of claim 1 , wherein the first ingot part is disposed closer to a first one of the ends at which growth of the silicon ingot began, wherein the second ingot part is disposed closer to a second one of the ends at which growth of the silicon ingot ended.
3. The silicon ingot of claim 2 , wherein the first ingot part has a higher specific resistance than the second ingot part.
4. The silicon ingot of claim 2 , wherein the specific resistance has a negative slope starting from the first one of the ends at which growth of the silicon ingot began to the second one of the ends end at which growth of the silicon ingot ended.
5. The silicon ingot of claim 4 , wherein the negative slope of the specific resistance increases toward the second one of the ends at which growth of the silicon ingot ended.
6. The silicon ingot of claim 1 , wherein the first ingot part is doped with the n-type dopant material, and wherein the region of the silicon ingot between the first and second ingot parts is doped with the n-type dopant material and additional n-type dopant material so that the specific resistance in the region of the silicon ingot between the first and second ingot parts is higher than the specific resistance in the first ingot part.
7. The silicon ingot of claim 1 , wherein the silicon ingot has a net n-type doping in a range between 1×10 13 cm −3 and 1×10 15 cm −3 .
8. The silicon ingot of claim 1 , wherein the p-type dopant material partially compensates the n-type doping.
9. The silicon ingot of claim 1 , wherein a degree of doping by the p-type dopant material varies between no doping and maximum doping in the silicon ingot.
10. The silicon ingot of claim 1 , wherein the first and second ingot parts are each doped with the n-type dopant material and the p-type dopant material, and wherein the p-type dopant material partially compensates the n-type doping in the first and second ingot parts.