Dielectric powder and multilayer ceramic electronic component using the same
A multilayer ceramic electronic component includes: a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes. The dielectric layer includes grains including: a semiconductive or conductive grain core region containing a base material represented by ABO 3 , where A is at least one of Ba, Sr, and Ca, and B is at least one of Ti, Zr, and Hf, and a doping material including a rare earth element; and an insulating grain shell region enclosing the grain core region.
1. A dielectric powder comprising:
a semiconductive or conductive core region containing a base material represented by ABO 3 , where A includes at least one of Ba, Sr, or Ca, and B includes at least one of Ti, Zr, or Hf, and a doping material including a rare earth element; and
an insulating shell region enclosing the core region,
wherein the shell region contains a first accessory ingredient including at least one element of Ba, Sr, or Nb, different from an element of the base material.
2. The dielectric powder of claim 1 , wherein the base material includes BaTiO 3 , and the first accessory ingredient includes at least one of Sr or Nb.
3. The dielectric powder of claim 1 , wherein the doping material includes at least one of Dy, Ho, Sm, La, Gd, Er, or Y.
4. The dielectric powder of claim 1 , wherein the doping material is doped in the core region in a content of 1 mol % to 10 mol %, based on a total mol % of the core region.
5. The dielectric powder of claim 1 , wherein the shell region contains:
a second accessory ingredient containing at least one of Si, Ba, or Al;
a third accessory ingredient containing at least one of Na, Li, K, or B; and
a fourth accessory ingredient containing at least one of Zr, Mg, Mn, or V.
6. The dielectric powder of claim 1 , wherein a ratio of a diameter of the core region to a thickness of the shell region is within a range of about 2.5:1 to 4:1.
7. The dielectric powder of claim 1 , further comprising an outermost layer containing the first accessory ingredient including at least one element of Ba, Sr, or Nb, different from an element of the base material.
8. The dielectric powder of claim 7 , wherein a concentration of the first accessory ingredient in the outermost layer is higher than a concentration of the first accessory ingredient in the shell region.
9. A multilayer ceramic electronic component comprising:
a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and
external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes,
wherein the dielectric layer includes grains including:
a semiconductive or conductive grain core region containing a base material represented by ABO 3 , where A includes at least one of Ba, Sr, or Ca, and B includes at least one of Ti, Zr, or Hf, and a doping material including a rare earth element; and
an insulating grain shell region enclosing the grain core region,
wherein the grain shell region contains a first accessory ingredient including at least one element of Ba, Sr, or Nb, different from an element of the base material.
10. The multilayer ceramic electronic component of claim 9 , wherein the base material includes BaTiO 3 , and the first accessory ingredient includes at least one of Sr or Nb.
11. The multilayer ceramic electronic component of claim 9 , wherein the base material includes SrTiO 3 , and the first accessory ingredient includes at least one of Ba or Nb.
12. The multilayer ceramic electronic component of claim 9 , wherein an average size of the grains is 50 nm to 500 nm.
13. The multilayer ceramic electronic component of claim 9 , wherein the doping material includes at least one of Dy, Ho, Sm, La, Gd, Er, or Y.
14. The multilayer ceramic electronic component of claim 9 , wherein the doping material is contained in the grain core region in a content of 1 mol % to 10 mol %, based on a total mol % of the grain core region.
15. The multilayer ceramic electronic component of claim 9 , wherein the grain shell region also contains the doping material, and
a concentration of the doping material in the grain shell region is lower than a concentration of the doping material in the grain core region.
16. The multilayer ceramic electronic component of claim 15 , wherein the doping material is contained in the grain shell region in a content lower than 0.5 mol %, based on a total mol % of the grain shell region.
17. The multilayer ceramic electronic component of claim 9 , wherein the grain shell region contains:
a second accessory ingredient containing at least one of Si, Ba, or Al;
a third accessory ingredient containing at least one of Na, Li, K, or B; and
a fourth accessory ingredient containing at least one of Zr, Mg, Mn, or V.
18. The multilayer ceramic electronic component of claim 9 , wherein the dielectric layer further comprises a grain boundary, and a concentration of the first accessory ingredient including at least one element of Ba, Sr, or Nb, different from an element of the base material, is higher in the grain boundary than a concentration of the first accessory ingredient in the grain shell region.
19. A dielectric powder comprising:
a semiconductive or conductive core region containing a base material represented by ABO 3 , where A includes at least one of Ba, Sr, or Ca, and B includes at least one of Ti, Zr, or Hf, and a doping material including a rare earth element; and
an insulating shell region enclosing the core region,
wherein the shell region contains:
a second accessory ingredient containing at least one of Si, Ba, or Al;
a third accessory ingredient containing at least one of Na, Li, K, or B; and
a fourth accessory ingredient containing at least one of Zr, Mg, Mn, or V.
20. A multilayer ceramic electronic component comprising:
a body part including dielectric layers and internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and
external electrodes disposed on an outer surface of the body part and electrically connected to the internal electrodes,
wherein the dielectric layer includes grains including:
a semiconductive or conductive grain core region containing a base material represented by ABO 3 , where A includes at least one of Ba, Sr, or Ca, and B includes at least one of Ti, Zr, or Hf, and a doping material including a rare earth element; and
an insulating grain shell region enclosing the grain core region,
wherein the grain shell region contains:
a second accessory ingredient containing at least one of Si, Ba, or Al;
a third accessory ingredient containing at least one of Na, Li, K, or B; and
a fourth accessory ingredient containing at least one of Zr, Mg, Mn, or V.