Three-dimensional semiconductor device
A semiconductor device includes a first channel layer and a second channel layer, each extending from an upper portion to a lower portion; and word lines stacked toward the upper portion from the lower portion, the word lines spaced apart from each other, the word lines each extending to surround the first channel layer and the second layer; a first lower select group surrounding a portion of the first channel layer that further protrudes toward the lower portion than the word lines; and a second lower select group surrounding a portion of the second channel layer that further protrudes toward the lower portion than the word lines.
1. A semiconductor device comprising:
first channel layers and second channel layers, connected between a source region and bit lines;
word lines stacked and spaced apart from each other between the source region and the bit lines, the word lines each extending to surround the first and second channel layers;
a first source select line surrounding the first channel layers between the word lines and the source region;
a second source select line surrounding the second channel layers between the word lines and the source region, the second source select line and the first source select line spaced apart from each other between the first channel layers and the second channel layers; and
a drain select line disposed between the bit lines and the word lines, the drain select line extending to overlap the first and second source select lines.
2. The semiconductor device of claim 1 , wherein the first source select line and the second source select line are disposed in a same layer.
3. The semiconductor device of claim 1 , wherein a total number of the first and second channel layers surrounded by each word line is equal to the number of first and second channel layers surrounded by the drain select line, and is two times the total number of the first channel layers surrounded by the first source select line or two times the total number of the second channel layers surrounded by the second source select line.
4. The semiconductor device of claim 1 , wherein a distance between adjacent first and second channel layers increases as the first and second channel layers approach the source region.
5. The semiconductor device of claim 1 , further comprising an isolation insulating layer covered by the word lines, wherein the first source select line is separated from the second source select line by the isolation insulating layer.
6. The semiconductor device of claim 1 , wherein at least one of the first channel layers and at least one of the second channel layers are commonly connected to any one of the bit lines.
7. The semiconductor device of claim 1 , further comprising source contact lines connected to the source region,
wherein the word lines, the drain select line, and the first and second source select lines are disposed between adjacent source contact lines.
8. The semiconductor device of claim 1 , wherein each of the first channel layers and the second channel layers includes:
a first semiconductor layer filled in a lower hole that penetrates the first source select line or the second source select line; and
a second semiconductor layer formed along a surface of an upper hole that penetrates the word lines, the second semiconductor layer connected to the first semiconductor layer.
9. A semiconductor device comprising:
first channel layers and second channel layers, connected between a source region and bit lines;
word lines stacked and spaced apart from each other between the source region and the bit lines, the word lines each extending to surround the first and second channel layers;
a first source select line surrounding the first channel layers between the word lines and the source region;
a second source select line surrounding the second channel layers between the word lines and the source region, the second source select line disposed to be spaced apart from the first source select line; and
a drain select line disposed between the bit lines and the word lines, the drain select line extending to overlap the first and second source select lines,
wherein each of the first source select line and the second source select line has a narrower width than each of the word lines and the drain select line.
10. The semiconductor device of claim 9 , wherein the first source select line and the second source select line are disposed in a same layer.
11. The semiconductor device of claim 9 , wherein a total number of the first and second channel layers surrounded by each word line is equal to the number of first and second channel layers surrounded by the drain select line, and is two times the total number of the first channel layers surrounded by the first source select line or two times the total number of the second channel layers surrounded by the second source select line.
12. The semiconductor device of claim 9 , wherein a distance between adjacent first and second channel layers increases as the first and second channel layers approach the source region.
13. The semiconductor device of claim 9 , wherein at least one of the first channel layers and at least one of the second channel layers are commonly connected to any one of the bit lines.
14. The semiconductor device of claim 9 , further comprising source contact lines connected to the source region,
wherein the word lines, the drain select line, and the first and second source select lines are disposed between adjacent source contact lines.
15. The semiconductor device of claim 9 , wherein each of the first channel layers and the second channel layers includes:
a first semiconductor layer filled in a lower hole that penetrates the first source select line or the second source select line; and
a second semiconductor layer formed along a surface of an upper hole that penetrates the word lines, the second semiconductor layer connected to the first semiconductor layer.
16. A semiconductor device comprising:
a first channel layer and a second channel layer, each extending from an upper portion to a lower portion, the first channel layer and the second channel layer, each having a longitudinal sectional structure of which width becomes narrower as the structure comes closer to the lower portion;
word lines stacked toward the upper portion from the lower portion, the word lines spaced apart from each other, the word lines each extending to surround the first channel layer and the second channel layer;
a first lower select group surrounding a portion of the first channel layer that further protrudes toward the lower portion than the word lines;
a second lower select group surrounding a portion of the second channel layer that further protrudes toward the lower portion than the word lines; and
an isolation insulating layer disposed between the first lower select group and the second lower select group, the isolation insulating layer covered by the word lines.
17. The semiconductor device of claim 16 , comprising an upper select group extending to surround a portion of the first channel layer and a portion of the second channel layer, which protrude farther toward the upper portion than the word lines.
18. The semiconductor device of claim 16 , further comprising a bit line commonly connected to the first channel layer and the second channel layer.
19. The semiconductor device of claim 16 , further comprising a source region commonly connected to the first channel layer and the second channel layer.
20. The semiconductor device of claim 16 , wherein the longitudinal sectional structure has a shape of an inverse trapezoid.