Driving apparatus and switching apparatus
A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.
1. A driving apparatus comprising:
a gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line;
a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element is lowered to a reference voltage during a turn-off period of the first semiconductor element; and
a first driving condition change circuit to trigger a reduction in a charge amount of a gate of the first semiconductor element by the gate driving circuit while still driving the gate of the first semiconductor element in an ON condition, according to the first timing signal.
2. The driving apparatus according to claim 1 , further comprising
a first determination circuit to determine whether the voltage applied to the second semiconductor element becomes the reference voltage or not, and wherein the first timing generating circuit generates the first timing signal according to determination that the voltage applied to the second semiconductor element becomes lower than or equal to the reference voltage.
3. The driving apparatus according to claim 2 , further comprising a first insulation signal transmitting unit provided between the first determination circuit and the first driving condition change circuit.
4. The driving apparatus according to claim 1 , wherein the first timing generating circuit is pre-adjusted so as to generate the first timing signal when, after receiving a control signal to turn off the first semiconductor element and starting turn-off of the first semiconductor element, time reaches a timing before the voltage applied to the second semiconductor element is reduced and becomes lower than or equal to the reference voltage.
5. The driving apparatus according to claim 1 , wherein the first timing generating circuit generates the first timing signal having a predetermined pulse width, and
the first driving condition change circuit reduces a speed at which the gate driving circuit changes charge of a gate of the first semiconductor element, while the first timing signal is active.
6. The driving apparatus according to claim 5 , wherein the first timing generating circuit ends generating the first timing signal before turn-off of the first semiconductor element ends.
7. The driving apparatus according to claim 1 , wherein the reference voltage is 0 V.
8. The driving apparatus according to claim 7 , further comprising a determination circuit to determine whether the voltage applied to the second semiconductor element becomes lower than or equal to the reference voltage during a turn-off period of the first semiconductor element.
9. A switching apparatus comprising:
the driving apparatus according to claim 1 ; and
the first semiconductor element and the second semiconductor element, whose gates are driven by the driving apparatus.
10. The switching apparatus according to claim 9 , wherein
the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.