ELECTRODE, FERROELECTRIC CERAMICS AND MANUFACTURING METHOD THEREOF
To obtain a piezoelectric film having excellent piezoelectric properties. An aspect of the present invention relates to ferroelectric ceramics including a first Sr(Ti 1−x Ru x )O 3 film and a PZT film formed on the first Sr(Ti 1−x Ru x )O 3 film, wherein the x satisfies a formula 1 below. 0.01≤x≤0.4 formula 1
1 - 11 . (canceled)
12 . A manufacturing method of ferroelectric ceramics comprising the steps of:
forming a Sr(Ti 1−x Ru x )O 3 film on a Pt film; and
forming a ferroelectric film on said Sr(Ti 1−x Ru x )O 3 film, wherein:
said ferroelectric film is a film having a perovskite or bismuth layered-structure oxide represented by ABO 3 or (Bi 2 O 2 ) 2+ (A m−1 B m O 3m+1 ) 2− (where A is at least one selected from the group consisting of Li, Na, K, Rb, Pb, Ca, Sr, Ba, Bi, La and Hf, B is at least one selected from the group consisting of Ru, Fe, Ti, Zr, Nb, Ta, V, W and Mo, and m is a natural number of 5 or less); and
said x satisfies a formula 1 below,
0.01≤ x≤ 0.4 formula 1.
13 . The manufacturing method of ferroelectric ceramics according to claim 12 , wherein, after forming said ferroelectric film, said ferroelectric film is subjected to etching processing.
14 . The manufacturing method of ferroelectric ceramics according to claim 12 , wherein said Sr(Ti 1−x Ru x )O 3 film is formed by sputtering.