SEMICONDUCTOR DEVICE AND METHOD OF FORMING CANTILEVERED PROTRUSION ON A SEMICONDUCTOR DIE
A semiconductor device has a first semiconductor die with a base material. A covering layer is formed over a surface of the base material. The covering layer can be made of an insulating material or metal. A trench is formed in the surface of the base material. The covering layer extends into the trench to provide the cantilevered protrusion of the covering layer. A portion of the base material is removed by plasma etching to form a cantilevered protrusion extending beyond an edge of the base material. The cantilevered protrusion can be formed by removing the base material to the covering layer, or the cantilevered protrusion can be formed within the base material under the covering layer. A second semiconductor die is disposed partially under the cantilevered protrusion. An interconnect structure is formed between the cantilevered protrusion and second semiconductor die.
1 . A semiconductor device, comprising:
a first semiconductor die including a cantilevered protrusion of the first semiconductor die; and
a second semiconductor die disposed at least partially under the cantilevered protrusion of the first semiconductor die.
2 . The semiconductor device of claim 1 , further including an electrical interconnect formed between the first semiconductor die and second semiconductor die.
3 . The semiconductor device of claim 2 , wherein the electrical interconnect includes a bond wire, a conductive layer, or a bump.
4 . The semiconductor device of claim 1 , further including a conductive via formed through the first semiconductor die.
5 . The semiconductor device of claim 1 , wherein the cantilevered protrusion includes a semiconductor material of the first semiconductor die.
6 . The semiconductor device of claim 1 , wherein a height of the second semiconductor die is less than a height of the first semiconductor die.
7 . A semiconductor device, comprising a first semiconductor die including a cantilevered protrusion of the first semiconductor die.
8 . The semiconductor device of claim 7 , further including a second semiconductor die disposed at least partially under the cantilevered protrusion of the first semiconductor die.
9 . The semiconductor device of claim 8 , further including an electrical interconnect formed between the first semiconductor die and second semiconductor die.
10 . The semiconductor device of claim 9 , wherein the electrical interconnect includes a bond wire, a conductive layer, or a bump.
11 . The semiconductor device of claim 8 , wherein a height of the second semiconductor die is less than a height of the first semiconductor die.
12 . The semiconductor device of claim 7 , wherein the cantilevered protrusion includes a semiconductor material of the first semiconductor die.
13 . The semiconductor device of claim 7 , further including a conductive via formed through the first semiconductor die.
14 . A method of making a semiconductor device, comprising:
providing a first semiconductor die including a cantilevered protrusion of the first semiconductor die; and
disposing a second semiconductor die at least partially under the cantilevered protrusion of the first semiconductor die.
15 . The method of claim 14 , further including an electrical interconnect formed between the first semiconductor die and second semiconductor die.
16 . The method of claim 15 , wherein the electrical interconnect includes a bond wire, a conductive layer, or a bump.
17 . The method of claim 14 , further including a conductive via formed through the first semiconductor die.
18 . The method of claim 14 , wherein an active surface of the first semiconductor die is oriented away from the second semiconductor die.
19 . The method of claim 14 , wherein a height of the second semiconductor die is less than a height of the first semiconductor die.
20 . The method of claim 14 , wherein the cantilevered protrusion includes a semiconductor material of the first semiconductor die.