Electrical fuse formation during a multiple patterning process
Interconnect structures and methods of fabricating an interconnect structure. A first interconnect and a second interconnect extend in a first direction in a interlayer dielectric layer and are spaced apart from each other. A third interconnect is arranged in the interlayer dielectric layer to connect the first interconnect with the second interconnect. The first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.
1. An interconnect structure comprising:
an interlayer dielectric layer including a first trench extending in a first direction, a second trench extending in the first direction, and a third trench connecting the first trench with the second trench, the first trench being laterally spaced from the second trench with the third trench located between the first trench and the second trench;
a first interconnect in the first trench;
a second interconnect in the second trench;
a third interconnect in the third trench, the third interconnect connecting the first interconnect with the second interconnect;
a fourth interconnect extending in the first direction in the interlayer dielectric layer between the first interconnect and the second interconnect, the fourth interconnect having an end; and
a fifth interconnect extending in the first direction in the interlayer dielectric layer between the first interconnect and the second interconnect, the fifth interconnect having an end,
wherein the interlayer dielectric layer, the first interconnect, the second interconnect, and the third interconnect are coplanar, the third interconnect is arranged in the first direction between the end of the fourth interconnect and the end of the fifth interconnect, the interlayer dielectric layer includes a first portion between the third interconnect and the end of the fourth interconnect, and the interlayer dielectric layer includes a second portion between the third interconnect and the end of the fifth interconnect, the first interconnect and the second interconnect have a first width, and the third interconnect has a second width that is less than the first width.
2. The interconnect structure of claim 1 wherein the third interconnect extends in a second direction relative to the first interconnect and the second interconnect, and the second direction is transverse within a plane to the first direction.
3. The interconnect structure of claim 2 wherein the first interconnect and the second interconnect are laterally arranged within the plane along parallel lines in the first direction.
4. The interconnect structure of claim 1 wherein the second width is less than or equal to 50 percent of the first width, and the second width is greater than or equal to 25 percent of the first width.
5. The interconnect structure of claim 1 wherein the first interconnect, the second interconnect, and the third interconnect have the same thickness.
6. The interconnect structure of claim 1 wherein the first interconnect and the second interconnect have a first cross-sectional area based in part on the first width, the third interconnect has a second cross-sectional area based in part on the first width, the second cross-sectional area is less than the first cross-sectional area, and the first interconnect, the second interconnect, and the third interconnect are comprised of sections of the same conductor layer.
7. The interconnect structure of claim 1 wherein the first interconnect is a first electrode of an electrical fuse, the second interconnect is a second electrode of the electrical fuse, and the third interconnect is a fuse link arranged to connect the first electrode with the second electrode.
8. The interconnect structure of claim 1 wherein the interlayer dielectric layer, the first interconnect, the second interconnect, and the third interconnect are arranged in a single metallization level.
9. The interconnect structure of claim 1 wherein the third interconnect has a length that extends in a second direction relative to a length of the first interconnect and the second interconnect, and the second direction is transverse within a plane to the first direction.
10. The interconnect structure of claim 1 wherein the first interconnect, the second interconnect, and the third interconnect are comprised of a metal.
11. The interconnect structure of claim 1 wherein the first interconnect, the second interconnect, and the third interconnect are comprised of copper (Cu), aluminum (Al), or cobalt (Co).
12. The interconnect structure of claim 1 wherein the third interconnect has a width in a range of five (5) nanometers to ten (10) nanometers.
13. The interconnect structure of claim 12 wherein the first interconnect and the second interconnect have a width equal to twenty (20) nanometers.
14. The interconnect structure of claim 1 wherein the interlayer dielectric layer, the first interconnect, the second interconnect, the third interconnect, the fourth interconnect, and the fifth interconnect are arranged in a single metallization level.
15. The interconnect structure of claim 1 wherein the first interconnect, the second interconnect, and the third interconnect are comprised of a metal.
16. The interconnect structure of claim 1 wherein the first interconnect, the second interconnect, the third interconnect, the fourth interconnect, and the fifth interconnect are comprised of copper (Cu), aluminum (Al), or cobalt (Co).
17. The interconnect structure of claim 1 wherein the interlayer dielectric layer, the first interconnect, the second interconnect, the third interconnect, the fourth interconnect, and the fifth interconnect have the same thickness.