SOI substrate and related methods
Implementations of a silicon-on-insulator (SOI) die may include a silicon layer including a first side and a second side, and an insulative layer coupled directly to the second side of the silicon layer. The insulative layer may not be coupled to any other silicon layer.
1. A method of making a silicon-on-insulator (SOI) die, the method comprising:
forming a ring around a perimeter of a second side of a silicon substrate through backgrinding the second side of the silicon substrate to a desired substrate thickness;
depositing an insulative layer onto the second side of the silicon substrate after backgrinding;
completely removing the ring around the perimeter of the second side of the silicon substrate; and
singulating the silicon substrate into a plurality of SOI die.
2. The method of claim 1 , further comprising forming a plurality of semiconductor devices on the first side of the silicon substrate, the first side opposite the second side of the silicon substrate.
3. The method of claim 1 , wherein the plurality of SOI die are less than 35 micrometers thick.
4. The method of claim 1 , further comprising stress relief etching the second side of the silicon substrate.
5. The method of claim 1 , wherein the insulative layer is deposited using one of co-evaporation and co-sputtering.
6. The method of claim 5 , further comprising dissipating heat through a heat dissipation device during deposition of the insulative layer.
7. The method of claim 5 , wherein the one of co-evaporation and co-sputtering occur at temperatures that do not require heat dissipation.
8. The method of claim 1 , wherein the method does not comprise implanting hydrogen.
9. The method of claim 1 , wherein no sacrificial carrier substrate is used to make the SOT die.
10. A method of making a silicon-on-insulator (SOI) die, the method comprising:
forming a ring around a perimeter of a second side of a silicon substrate through backgrinding the second side of the silicon substrate to a desired substrate thickness;
depositing a conductive layer onto the second side of the silicon substrate;
depositing an insulative layer over the conductive layer;
removing the ring around the perimeter of the second side of the silicon substrate; and
singulating the silicon substrate into a plurality of SOI die.
11. The method of claim 10 , further comprising patterning the conductive layer.
12. The method of claim 10 , wherein the conductive layer comprises titanium.
13. The method of claim 10 , wherein the silicon substrate is thinned to less than 35 micrometers.
14. The method of claim 10 , wherein the insulative layer is deposited using one of co-evaporation and co-sputtering.