Methods and systems for inspection of wafers and reticles using designer intent data
Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.
1. A computer-implemented method, comprising:
determining a design significance of a defect detected on a reticle, wherein the design significance is a measure of how the defect impacts a design of the reticle;
determining a lithographic significance of the defect, wherein the lithographic significance is a measure of how the defect impacts a wafer patterned by a lithography process that uses the reticle;
determining an overall significance of the defect based on the design significance and the lithographic significance; and
determining one or more parameters of a process used to repair the defect and another defect detected on the reticle based on the overall significance of the defect and an overall significance determined for the other defect, respectively, wherein the process comprises repairing the defect and the other defect, and wherein determining the one or more parameters of the process used to repair the defect and the other defect comprises determining that the one or more parameters of the process used to repair the defect and the other defect are different based on the overall significances determined for the defect and the other defect, respectively.
2. The method of claim 1 , further comprising determining a design significance of different regions on the reticle, wherein said determining the design significance of the defect is based on the design significance of the region on the reticle in which the defect is located.
3. The method of claim 1 , wherein said determining the design significance comprises comparing data representative of the defect to a threshold and determining that the defect has design significance if the data is greater than the threshold.
4. The method of claim 1 , wherein said determining the design significance comprises comparing data representative of the defect to a threshold, and wherein the threshold varies depending on a location of the defect on the reticle.
5. The method of claim 1 , further comprising determining a lithographic significance of different regions on the reticle, wherein said determining the lithographic significance of the defect is based on the lithographic significance of the region on the reticle in which the defect is located.
6. The method of claim 1 , wherein said determining the lithographic significance comprises comparing data representative of the defect to a threshold and determining that the defect has lithographic significance if the data is greater than the threshold.
7. The method of claim 1 , wherein said determining the lithographic significance comprises comparing data representative of the defect to a threshold, and wherein the threshold varies depending on a location of the defect on the reticle.
8. The method of claim 1 , wherein the overall significance is selected from the group consisting of lithographically and design significant, lithographically significant only, design significant only, and not significant.
9. The method of claim 1 , further comprising determining an overall significance of different regions on the reticle and determining one or more parameters of a process used to fabricate the different regions of the reticle based on the overall significance of the different regions such that the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
10. The method of claim 1 , further comprising determining an overall significance of different regions on the reticle and altering one or more parameters of a process used to inspect the different regions of the reticle based on the overall significance of the different regions such that, the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
11. The method of claim 1 , further comprising determining an overall significance of different regions on the reticle and altering one or parameters of the process used to repair the reticle based on the overall significance of the different regions such that the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
12. The method of claim 1 , further comprising determining processing of the reticle based on the overall significance of the defect, wherein the processing comprises rejecting the reticle, repairing the reticle, or cleaning the reticle.
13. The method of claim 1 , further comprising generating a visual representation of the defect, wherein the visual representation comprises one or more designations assigned to the defect indicating the overall significance of the defect.
14. The method of claim 1 , further comprising generating a visual representation of a plurality of individual regions on the reticle, wherein the visual representation comprises designations assigned to the individual regions indicating the overall significance of the individual regions.
15. A system, comprising a computer processor configured for:
determining a design significance of a defect detected on a reticle, wherein the design significance is a measure of how the defect impacts a design of the reticle;
determining a lithographic significance of the defect, wherein the lithographic significance is a measure of how the defect impacts a wafer patterned by a lithography process that uses the reticle;
determining an overall significance of the defect based on the design significance and the lithographic significance; and
determining one or more parameters of a process used to repair the defect and another defect detected on the reticle based on the overall significance of the defect and an overall significance determined for the other defect, respectively, wherein the process comprises repairing the defect and the other defect, and wherein determining the one or more parameters of the process used to repair the defect and the other defect comprises determining that the one or more parameters of the process used to repair the defect and the other defect are different based on the overall significances determined for the defect and the other defect, respectively.
16. The system of claim 15 , wherein the computer processor is further configured for determining a design significance of different regions on the reticle, and wherein said determining the design significance of the defect is based on the design significance of the region on the reticle in which the defect is located.
17. The system of claim 15 , wherein said determining the design significance comprises comparing data representative of the defect to a threshold and determining that the defect has design significance if the data is greater than the threshold.
18. The system of claim 15 , wherein said determining the design significance comprises comparing data representative of the defect to a threshold, and wherein the threshold varies depending on a location of the defect on the reticle.
19. The system of claim 15 , wherein the computer processor is further configured for determining a lithographic significance of different regions on the reticle, and wherein said determining the lithographic significance of the defect is based on the lithographic significance of the region on the reticle in which the defect is located.
20. The system of claim 15 , wherein said determining the lithographic significance comprises comparing data representative of the defect to a threshold and determining that the defect has lithographic significance if the data is greater than the threshold.
21. The system of claim 15 , wherein said determining the lithographic significance comprises comparing data representative of the defect to a threshold, and wherein the threshold varies depending on a location of the defect on the reticle.
22. The system of claim 15 , wherein the overall significance is selected from the group consisting of lithographically and design significant, lithographically significant only, design significant only, and not significant.
23. The system of claim 15 , wherein the computer processor is further configured for determining an overall significance of different regions on the reticle and determining one or more parameters of a process used to fabricate the different regions of the reticle based on the overall significance of the different regions such that the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
24. The system of claim 15 , wherein the computer processor is further configured for determining an overall significance of different regions on the reticle and altering one or more parameters of a process used to inspect the different regions of the reticle based on the overall significance of the different regions such that the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
25. The system of claim 15 , wherein the computer processor is further configured for determining an overall significance of different regions on the reticle and altering one or parameters of the process used to repair the reticle based on the overall significance of the different regions such that the one or more parameters of the process in one of the different regions is different than the one or more parameters of the process in another of the different regions.
26. The system of claim 15 , wherein the computer processor is further configured for determining processing of the reticle based on the overall significance of the defect, and wherein the processing comprises rejecting the reticle, repairing the reticle, or cleaning the reticle.
27. The system of claim 15 , wherein the computer processor is further configured for generating a visual representation of the defect, and wherein the visual representation comprises one or more designations assigned to the defect indicating the overall significance of the defect.
28. The system of claim 15 , wherein the computer processor is further configured for generating a visual representation of a plurality of individual regions on the reticle, and wherein the visual representation comprises designations assigned to the individual regions indicating the overall significance of the individual regions.
29. A non-transitory computer-readable medium, storing program instructions executable on a computer system for performing a computer-implemented method, wherein the computer-implemented method comprises:
determining a design significance of a defect detected on a reticle, wherein the design significance is a measure of how the defect impacts a design of the reticle;
determining a lithographic significance of the defect, wherein the lithographic significance is a measure of how the defect impacts a wafer patterned by a lithography process that uses the reticle;
determining an overall significance of the detect based on the design significance and the lithographic significance; and
determining one or more parameters of a process used to repair the defect and another defect detected on the reticle based on the overall significance of the defect and an overall significance determined for the other defect, respectively, wherein the process comprises repairing the defect and the other defect, and wherein determining the one or more parameters of the process used to repair the defect and the other defect comprises determining that the one or more parameters of the process used to repair the defect and the other defect are different based on the overall significances determined for the defect and the other defect, respectively.