Erasing method and storage medium
Provided are an erasing method, erasing apparatus for memory cells and a storage medium to perform erase loops with a more appropriate erasing voltages. The method includes performing erase loops on a target erasing block by sequentially using first erasing voltages Vn; and when a predetermined condition is reached, proceeding to perform erase loops on the target erasing block by sequentially using second erasing voltages Um until the target erasing block is successfully erased. Vn=V1+(n−1)×d1, where n denotes erase loop counts of the first erasing voltages, n is an integer greater than or equal to 1, and V1 and d1 are positive numbers. Um=Vn+(m−1)×d2, where m denotes erase loop counts of the second erasing voltages, m is an integer greater than or equal to 2, and d2 is a positive number not equal to d1.
1. An erasing method for memory cells, comprising:
performing erase loops on a target erasing block by sequentially using first erasing voltages Vn; and
when a predetermined condition is reached, proceeding to perform erase loops on the target erasing block by sequentially using second erasing voltages Um until the target erasing block is successfully erased,
wherein Vn=V1+(n−1)×d1, wherein n denotes erase loop count of the first erasing voltages, n is an integer greater than or equal to 1, and V1 and d1 are all positive numbers; and Um=Vn+(m−1)×d2, wherein m denotes erase loop count of the second erasing voltages, m is an integer greater than or equal to 2, and d2 is a positive number not equal to d1.
2. The erasing method of claim 1 , wherein the performing erase loops on a target erasing block by sequentially using first erasing voltages comprises:
performing an erase operation on the target erasing block using a respective one of the first erasing voltages;
performing an erase verify for the erase operation;
if the erase verify is not passed, increasing the erase loop count n for the first erasing voltages by one and returning to the step of performing an erase operation on the target erasing block using a respective one of the first erasing voltages; and
if the erase verify is passed, ending the erasing method.
3. The erasing method of claim 1 , wherein the predetermined condition comprises: a number of the erase loops performed on the target erasing block by sequentially using first erasing voltages reaches a preset number.
4. The erasing method of claim 2 , wherein the predetermined condition comprises: a number of the erase loops performed on the target erasing block by sequentially using first erasing voltages reaches a preset number.
5. The erasing method of claim 1 , wherein the predetermined condition comprises: one of the first erasing voltages reaches a predetermined value.
6. The erasing method of claim 2 , wherein the predetermined condition comprises: one of the first erasing voltages reaches a predetermined value.
7. The erasing method of claim 2 , wherein the predetermined condition comprises: a number of memory cells, that have not passed the erase verify, in the target erasing block is greater than a preset number.
8. The erasing method of claim 1 , wherein the proceeding to perform erase loops on the target erasing block by sequentially using second erasing voltages comprises:
performing an erase operation on the target erasing block using a respective one of the second erasing voltages;
performing an erase verify for the erase operation;
if the erase verify is not passed, increasing the erase loop count m for the second erasing voltages by one and returning to the step of performing an erase operation on the target erasing block using a respective one of the second erasing voltages; and
if the erase verify is passed, ending erasing method,
wherein an initial value of the erase loop count m of the second erasing voltages is 2.
9. The erasing method of claim 1 , wherein performing an erase operation on the target erasing block comprises: applying, by a charge pump, the first erasing voltages Vn or the second erasing voltages Um to a substrate of memory cells in the target erasing block.
10. The erasing method of claim 2 , wherein performing an erase operation on the target erasing block comprises: applying, by a charge pump, the first erasing voltages Vn or the second erasing voltages Um to a substrate of memory cells in the target erasing block.
11. The erasing method of claim 2 , wherein the performing the erase verify for the erase operation comprises:
performing a read operation on memory cells in the target erasing block; and
if a reading result is 1, determining that the erase operation succeeds, and if the reading result is 0, determining that the erase operation fails.