Semiconductor memory device and method having temperature sensing circuit and count value for adjusting circuit operations

1. A method of operating a semiconductor device, comprising:

providing a multi-bit count value to a temperature sensing circuit of the semiconductor device; and

generating an output having a detect logic level from the temperature sensing circuit based on an internal temperature of the semiconductor device and the count value.

2. The method of claim 1 , further including:

providing at least one bit of the count value to an exclusive OR or an exclusive NOR logic function.

3. The method of claim 1 , wherein:

the multi-bit count value includes at least 3 bits.

4. The method of claim 1 , wherein:

the semiconductor device is a dynamic random access memory (DRAM).

5. The method of claim 4 , further including:

adjusting a refresh circuit in response to the count value.

6. The method of claim 1 , further including:

incrementally changing the multi-bit count value after generating an output having a detect logic level.

7. The method of claim 6 , wherein incrementally changing the multi-bit count value comprises:

changing the internal temperature of the semiconductor device at which the output from the temperature sensing circuit is generated at a detect logic level.

8. The method of claim 1 , wherein:

the multi-bit count value indicates a temperature range.

9. The method of claim 8 , wherein:

a logic level combination of the multi-bit count value indicates a unique temperature range.

10. The method of claim 9 , wherein:

the unique temperature range changes based on the logic level combination of the multi-bit count value.