Enlarged contact area structure using noble metal cap and noble metal liner
A method is presented for forming an enlarged contact area. The method includes forming a trench for receiving a first conductive material, forming a noble metal cap over a portion of the first conductive material, forming a dielectric capping layer over the noble metal cap, etching a portion of the first conductive material to create a via anchoring structure and an undercut region exposing a bottom surface of the noble metal cap, and depositing a plurality of liners such that one liner of the plurality of liners directly contacts an entirety of the exposed bottom surface of the noble metal cap.
1. A method for forming an enlarged contact area, the method comprising:
forming a trench for receiving a first conductive material;
forming a noble metal cap over a portion of the first conductive material;
forming a dielectric capping layer over the noble metal cap;
etching a portion of the first conductive material to create a via anchoring structure and an undercut region exposing a bottom surface of the noble metal cap; and
depositing a plurality of liners such that one liner of the plurality of liners directly contacts an entirety of the exposed bottom surface of the noble metal cap.
2. The method of claim 1 , wherein the metal received within the trench is copper (Cu).
3. The method of claim 1 , wherein the noble metal cap is a ruthenium (Ru) cap.
4. The method of claim 1 , wherein the etching is an isotropic wet etch that prevents etching of the noble metal cap.
5. The method of claim 1 , wherein the plurality of liners includes three layers.
6. The method of claim 5 , wherein the first layer is a tantalum nitride (TaN) liner, the second layer is a ruthenium (Ru) liner, and the third layer is a copper (Cu) layer.
7. The method of claim 1 , further comprising filling the undercut region with a second conductive material such that voids are prevented from forming between a via and the first conductive material.
8. A method for forming an enlarged contact area, the method comprising:
depositing a first conductive material within a barrier layer;
forming a ruthenium (Ru) cap over a portion of the first conductive material;
etching a portion of the first conductive material;
creating a via anchoring structure and an undercut region exposing a bottom surface of the Ru cap; and
depositing a plurality of liners such at least one liner of the plurality of liners directly contacts the exposed bottom surface of the Ru cap such that plating current flows through the plurality of liners.
9. The method of claim 8 , wherein the metal received within the barrier layer is copper (Cu).
10. The method of claim 8 , wherein the etching is an isotropic wet etch that prevents etching of the Ru cap.
11. The method of claim 8 , wherein the plurality of liners includes three layers.
12. The method of claim 11 , wherein the first layer is a tantalum nitride (TaN) liner, the second layer is a ruthenium (Ru) liner, and the third layer is a copper (Cu) layer.
13. The method of claim 8 , further comprising filling the undercut region with a second conductive material such that voids are prevented from forming between a via and the first conductive material.
14. A semiconductor structure forming an enlarged contact area, the structure comprising:
a first conductive material disposed within a barrier layer;
a noble metal cap disposed over a portion of the first conductive material;
a via anchoring structure created by etching a portion of the first conductive material;
an undercut region defined under the noble metal cap, the undercut region exposing a bottom surface of the noble metal cap; and
a plurality of liners deposited such at least one liner of the plurality of liners directly contacts the exposed bottom surface of the noble metal cap.
15. The structure of claim 14 , wherein the metal received within the barrier layer is copper (Cu).
16. The structure of claim 14 , wherein the noble metal cap is a ruthenium (Ru) cap.
17. The structure of claim 14 , wherein the plurality of liners includes three layers.
18. The structure of claim 17 , wherein the first layer is a tantalum nitride (TaN) liner, the second layer is a ruthenium (Ru) liner, and the third layer is a copper (Cu) layer.
19. The structure of claim 14 , wherein the undercut region is filled with a second conductive material such that voids formation is prevented between a via and the first conductive material.
20. The structure of claim 14 , wherein plating current flows through the plurality of liners due to the noble metal cap directly contacting the at least one liner of the plurality of liners.