IP Library Granted Patent US 10,373,924
Granted Patent B2
US 10,373,924 · App. 15/967,820 · Granted Aug 6, 2019

Grid array connection device and method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,373,924
App. No.
15/967,820
Granted
Aug 6, 2019
Kind
B2
Abstract

A method and device for input/output connections is provided. Devices and methods for connection structure are shown with improved mechanical properties such as hardness and abrasion resistance. Land grid array structures are provided that are less expensive to manufacture due to reductions in material cost such as gold. Ball grid array structures are provided with improved resistance to corrosion during fabrication. Ball grid array structures are also provided with improved mechanical properties resulting in improved shock testing results.

Claims (27)

1. An electronic device comprising:

a chip package that includes a chip connection structure, to mount the chip package on a circuit board, wherein the chip connection structure includes:

a first layer that includes nickel (Ni); and

a second layer that includes palladium (Pd), disposed on the first layer, wherein the second layer comprises a substantially amorphous structure.

2. The electronic device of claim 1 , further comprising a metallic connection structure provided on a side of the chip package that is to be mounted on the circuit board, wherein the first layer is coupled with the metallic connection structure.

3. The electronic device of claim 2 , wherein the metallic connection structure comprises a pad.

4. The electronic device of claim 1 , wherein the second layer further comprises a substantially non-porous structure, to prevent corrosion of the first layer.

5. The electronic device of claim 1 , further comprising a third layer disposed on the second layer, wherein the third layer has a determined thickness.

6. The electronic device of claim 5 , wherein the third layer comprises gold, wherein the determined thickness of the third layer is between 50 and 80 μm.

7. The electronic device of claim 2 , wherein the metallic connection structure comprises copper (Cu).

8. The electronic device of claim 1 , wherein the second layer further includes phosphorus (P).

9. The electronic device of claim 1 , wherein the first layer further includes phosphorus (P).

10. The electronic device of claim 1 , wherein the chip connection structure provides an input/output connection between the chip package and the circuit board.

11. The electronic device of claim 1 , wherein the electronic device comprises a chip assembly, wherein the chip connection structure is to receive a pin provided on the circuit board.

12. The electronic device of claim 1 , wherein the first layer has a thickness between 5 and 8 μm.

13. The electronic device of claim 1 , wherein the second layer has a thickness of about 100 μm.

14. A method comprising:

forming, on a chip package to be mounted on a circuit board, a first layer that includes nickel (Ni); and

forming a second layer that includes palladium (Pd), on the first layer, wherein forming the second layer includes providing a substantially amorphous structure for the second layer.

15. The method of claim 14 , further comprising:

providing a metallic connection structure on a side of the chip package that is to be mounted on the circuit board; and

coupling the first layer with the metallic connection structure.

16. The method of claim 14 , wherein forming the second layer further includes providing a substantially non-porous structure of the second layer, to prevent corrosion of the first layer.

17. The method of claim 14 , further comprising disposing a third layer disposed on the second layer, wherein the third layer has a determined thickness.

18. The method of claim 17 , wherein the third layer comprises gold, wherein the determined thickness of the third layer is between 50 and 80 μm.

19. The method of claim 14 , wherein the first layer further includes phosphorous (P).

20. The method of claim 14 , wherein the second layer further includes phosphorus (P).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →