IP Library Granted Patent US 10,703,947
Granted Patent B2
US 10,703,947 · App. 15/970,353 · Granted Jul 7, 2020

Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

Inventors: Tomohiro Iwano (Hitachi, JP); Hirotaka Akimoto (Hitachi, JP); Takenori Narita (Hitachi, JP); Tadahiro Kimura (Hitachi, JP); Daisuke Ryuzaki (Kokubunji, JP)
Assignee: HITACHI CHEMICAL COMPANY, LTD.
C09K3/1463B24B37/044C09G1/02H01L21/31053
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Quick Facts
Patent No.
US 10,703,947
App. No.
15/970,353
Granted
Jul 7, 2020
Kind
B2
Abstract

The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

Claims (11)

1. A method of adjusting a polishing rate, comprising:

adjusting light transmittance produced by abrasive grains including tetravalent cerium hydroxide particles to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and

polishing at least a portion of a film to be polished while supplying a slurry comprising the abrasive grains between an abrasive pad and the film to be polished.

2. The method of adjusting a polishing rate according to claim 1 , wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.

3. A method of inhibiting reduction in a polishing rate, comprising:

adjusting light transmittance produced by abrasive grains including tetravalent cerium hydroxide particles to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %; and

polishing at least a portion of a film to be polished while supplying a polishing liquid comprising the abrasive grains and an additive between an abrasive pad and the film to be polished.

4. The method of inhibiting reduction in a polishing rate according to claim 3 , wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.

5. A method of adjusting a polishing rate of a slurry comprising water and abrasive grains including tetravalent cerium hydroxide particles, the method comprising:

adjusting light transmittance produced by the abrasive grains to at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

6. The method of adjusting a polishing rate according to claim 5 , wherein the abrasive grains consist of the tetravalent cerium hydroxide particles.

Assignments (5)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
CHANGE OF ADDRESS Recorded May 18, 2020
From: HITACHI CHEMICAL COMPANY, LTD.
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 052688/0026 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2020
From: IWANO, TOMOHIRO; AKIMOTO, HIROTAKA; NARITA, TAKENORI; KIMURA, TADAHIRO; RYUZAKI, DAISUKE
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 052000/0970 →