Infrared detector devices and focal plane arrays having a transparent common ground structure and methods of fabricating the same
Focal plane arrays and infrared detector device having a transparent common ground structure and methods of their fabrication are disclosed. In one embodiment, a front-side illuminated infrared detector device includes a contact layer and a detector structure adjacent to the contact layer. The detector structure is capable of absorbing radiation. The front-side illuminated infrared detector device further includes a common ground structure adjacent the detector structure, wherein the common ground structure is transmissive to radiation having a wavelength in a predetermined spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure. The front-side illuminated infrared detector device further includes an optical layer adjacent the common ground structure.
1. A front-side illuminated infrared detector device comprising:
a contact layer;
a detector structure adjacent to the contact layer, wherein the detector structure is capable of absorbing radiation;
a common ground structure adjacent the detector structure, wherein the entire common ground structure is transmissive to radiation in an infrared spectral band, and the common ground structure has a bandgap that is wider than a bandgap of the detector structure; and
an optical layer adjacent the common ground structure.
2. The front-side illuminated infrared detector device of claim 1 , further comprising a uni-polar barrier layer disposed between the common ground structure and the detector structure.
3. The front-side illuminated infrared detector device of claim 2 , wherein the contact layer is a p-doped short-wave infrared layer, and the detector structure comprises an absorber layer having a short-wave to mid-wave chirped region adjacent the uni-polar barrier layer.
4. The front-side illuminated infrared detector device of claim 1 , wherein the common ground structure comprises an etch buffer region and a primary conduction region.
5. The front-side illuminated infrared detector device of claim 4 , wherein the etch buffer region is unintentionally doped and the primary conduction region is doped.
6. The front-side illuminated infrared detector device of claim 1 , wherein the common ground structure comprises:
a common ground plane layer;
a carrier collector layer adjacent the common ground plane layer; and
uni-polar barrier layer disposed between the carrier collector layer and the detector structure.
7. The front-side illuminated infrared detector device of claim 6 , wherein the carrier collector layer has a bandgap that is narrower than the bandgap of the detector structure.
8. The front-side illuminated infrared detector device of claim 6 , wherein the carrier collector layer has alternating layers of a wider bandgap material and a narrower bandgap material such that a bandgap of the carrier collector layer has a corrugated shape.
9. The front-side illuminated infrared detector device of claim 1 , wherein:
the common ground structure comprises a common ground plane layer and a pass-through conduction layer disposed between the detector structure and the common ground plane layer; and
the common ground plane layer comprises aluminum.
10. The front-side illuminated infrared detector device of claim 9 , further comprising an oxidation prevention layer disposed between the common ground plane layer and the optical layer.
11. The front-side illuminated infrared detector device of claim 9 , wherein the common ground structure further comprises a uni-polar barrier layer disposed between the pass-through conduction layer and the detector structure.
12. The front-side illuminated infrared detector device of claim 9 , wherein the detector structure comprises a first absorber layer having a first bandgap and a second absorber layer having a second bandgap.
13. The front-side illuminated infrared detector device of claim 12 , further comprising a uni-polar barrier layer disposed between the first absorber layer and the second absorber layer.
14. The front-side illuminated infrared detector device of claim 1 , wherein the detector structure comprises:
a first absorber layer having a first bandgap;
a second absorber layer having a second bandgap; and
a uni-polar layer disposed between the first absorber layer and the second absorber layer.
15. The front-side illuminated infrared detector device of claim 14 , wherein the common ground structure comprises a common ground plane layer comprising aluminum.
16. A focal plane array comprising:
an array of pixels, each pixel comprising an infrared detector device further comprising:
a contact layer;
a detector structure adjacent to the contact layer, wherein the detector structure is capable of absorbing radiation;
a common ground structure adjacent the detector structure, wherein:
the entire common ground structure is transmissive to radiation in an infrared spectral band;
the common ground structure has a bandgap that is wider than a bandgap of the detector structure; and
the contact layer and the detector structure are fully reticulated, and the common ground structure provides a common ground for the array of pixels; and
an optical layer adjacent the common ground structure.
17. The focal plane array of claim 16 , wherein the array of pixels comprises at least one ground pixel.
18. The focal plane array of claim 17 , wherein the at least ground pixel comprises an electrically conductive layer disposed on a wall of the at least one ground pixel that electrically couples the contact layer of the at least one ground pixel to the common ground structure.
19. The focal plane array of claim 16 , wherein each pixel further comprises a uni-polar barrier layer disposed between the common ground structure and the detector structure, and the uni-polar barrier layer is fully reticulated.
20. The focal plane array of claim 19 , wherein the contact layer is a p-doped short-wave infrared layer, and the detector structure comprises an absorber layer having a short-wave to mid-wave chirped region adjacent the uni-polar barrier layer.
21. The focal plane array of claim 16 , wherein the common ground structure comprises an etch buffer region and a primary conduction region.
22. The focal plane array of claim 21 , wherein the etch buffer region is partially reticulated and the primary conduction region is not reticulated.
23. The focal plane array of claim 21 , wherein the etch buffer region is unintentionally doped and the primary conduction region is doped.
24. The focal plane array of claim 16 , wherein the common ground structure comprises:
a common ground plane layer;
a carrier collector layer adjacent the common ground plane layer; and
uni-polar barrier layer disposed between the carrier collector layer and the detector structure.
25. The focal plane array of claim 24 , wherein:
the uni-polar barrier layer is fully reticulated;
the carrier collector layer is at least partially reticulated; and
the common ground plane layer is not reticulated.
26. The focal plane array of claim 24 , wherein:
the uni-polar barrier layer is fully reticulated;
the carrier collector layer is fully reticulated; and
the common ground plane layer is partially reticulated.
27. The focal plane array of claim 24 , wherein:
the array of pixels comprises at least one ground pixel comprising an electrically conductive layer disposed on a wall of the at least one ground pixel that electrically couples the contact layer of the at least one ground pixel to the common ground structure;
the uni-polar barrier layer of the at least one ground pixel is fully reticulated;
the carrier collector layer is partially reticulated; and
the uni-polar barrier layer and the carrier collector layer of active pixels of the array of pixels are not reticulated.
28. The focal plane array of claim 27 , wherein the carrier collector layer has a bandgap that is narrower than the bandgap of the detector structure.
29. The focal plane array of claim 27 , wherein the carrier collector layer has alternating layers of a wider bandgap material and a narrower bandgap material such that a bandgap of the carrier collector layer has a corrugated shape.
30. The focal plane array of claim 16 , wherein:
the common ground structure comprises a common ground plane layer and a pass-through conduction layer disposed between the detector structure and the common ground plane layer;
the pass-through conduction layer is fully reticulated; and
the common ground plane layer comprises aluminum.
31. The focal plane array of claim 30 , further comprising an oxidation prevention layer disposed between the common ground plane layer and the optical layer.
32. The focal plane array of claim 30 , wherein the common ground structure further comprises a uni-polar barrier layer disposed between the pass-through conduction layer and the detector structure.
33. The focal plane array of claim 30 , wherein the detector structure comprises a first absorber layer having a first bandgap and a second absorber layer having a second bandgap.
34. The focal plane array of claim 33 , further comprising a uni-polar barrier layer disposed between the first absorber layer and the second absorber layer.
35. The focal plane array of claim 16 , wherein the detector structure comprises:
a first absorber layer having a first bandgap;
a second absorber layer having a second bandgap; and
a uni-polar layer disposed between the first absorber layer and the second absorber layer.
36. The focal plane array of claim 35 , wherein the common ground structure comprises a common ground plane layer comprising aluminum.