Wafer inspection using difference images
Systems and methods increase the signal to noise ratio of optical inspection of wafers to obtain higher inspection sensitivity. The computed reference image can minimize a norm of the difference of the test image and the computed reference image. A difference image between the test image and a computed reference image is determined. The computed reference image includes a linear combination of a second set of images.
1. A method comprising:
receiving, at a processor, a test image of a die under test on a wafer;
receiving, at the processor, images of a second set of dies;
determining a difference image between the test image and a computed reference image using the processor, wherein the computed reference image is derived from the images of the second set of dies such that a norm of the difference image is minimized, wherein the computed reference image is a linear combination of terms, each term being a convolution of an adjustable filter with an image of one of the dies in the second set of dies; and
detecting defects on the difference image using the processor.
2. The method of claim 1 , wherein a sum of squares of pixels of the difference image is minimized.
3. The method of claim 1 , wherein the images of the second set of dies are acquired at different imaging conditions.
4. The method of claim 3 , wherein the different imaging conditions include different parameters for at least one of focus, illumination pupil shape, illumination polarization, illumination wavelength spectrum, imaging numerical aperture, imaging pupil shape, imaging pupil analyzer, imaging pupil jones matrix, imaging pupil apodization, or imaging pupil wavefront.
5. The method of claim 4 , wherein the different imaging conditions include different parameters of the focus for each of the images of the second set of dies.
6. The method of claim 1 , wherein the second set of dies are on one or more wafers other than the wafer with the die under test.
7. The method of claim 6 , wherein the second set of dies are on different wafers and a thickness of a layer changes from wafer to wafer.
8. The method of claim 6 , wherein the second set of dies are printed using different lithographic exposure doses.
9. The method of claim 6 , wherein the second set of dies are printed using different lithographic focus settings.
10. The method of claim 1 , wherein at least one of the second set of dies is at an edge of a wafer.
11. The method of claim 1 , further comprising acquiring each of the test image and the images of the second set of dies from one of an optical microscope, a laser scanning system, a near-field microscope, an electron beam microscope, an ion beam microscope, an x-ray microscope, an atomic force microscope, or a ptychographic imaging system.
12. The method of claim 1 , further comprising:
forming a data matrix such that each column of the data matrix is an aligned image of a die; and
decomposing the data matrix into two parts, wherein a first matrix of the two parts is low-rank and a second matrix of the two parts has at least one non-zero entity, wherein the second matrix includes isolated point defects and the first matrix includes a pattern of the wafer and process variations.
13. The method of claim 1 , further comprising, using the processor, determining the computed reference image from the images of the second set of dies.
14. A system comprising:
a processor in electronic communication with an electronic data storage unit and a wafer inspection tool, wherein the processor is configured to execute instructions that:
determine a difference image between the test image and a computed reference image, wherein the computed reference image is derived from images of a second set of dies such that a norm of the difference image is minimized, wherein the computed reference image is a linear combination of terms, each term being a convolution of an adjustable filter with an image of one of the dies in the second set of dies; and
detecting defects using the difference image.
15. The system of claim 14 , wherein the wafer inspection tool is one of an optical microscope, a laser scanning system, a near-field microscope, an electron beam microscope, an ion beam microscope, an x-ray microscope, an atomic force microscope, or a ptychographic imaging system.
16. The system of claim 14 , wherein a sum of squares of pixels of the difference image is minimized.
17. The system of claim 14 , wherein each of the images of the second set of dies is acquired at different imaging conditions, and wherein the different imaging conditions include different parameters for at least one of illumination pupil shape, illumination polarization, illumination wavelength spectrum, focus, imaging numerical aperture, imaging pupil shape, imaging pupil analyzer, imaging pupil jones matrix, imaging pupil apodization, or imaging pupil wavefront.
18. The system of claim 14 , wherein the processor is further configured to determine the computed reference image from the images of the second set of dies.