Inter-cell bridge defect diagnosis
Failing test pattern simulations are performed to determine initial defect suspects based on injecting faults to defect candidate sites which are derived based on test responses. Initial inter-cell bridge suspects are then determined from cells in the initial defect suspects based on layout information and electrical information of the circuit. Passing test pattern simulations are performed to determine inter-cell bridge suspects from the initial inter-cell bridge suspects.
1. A method, executed by at least one processor of a computer, comprising:
performing failing test pattern simulations to determine initial defect suspects based on injecting faults to defect candidate sites, the defect candidate sites determined based on test responses, the test responses obtained by applying test patterns to a circuit for testing, and the test responses comprising failing bits;
determining initial inter-cell bridge suspects from cells in the initial defect suspects based on layout information and electrical information of the circuit, the determining comprising identifying pairs of neighboring cells based on the layout information, the electrical information of the circuit comprising cell internal signal information which is obtained based on transistor-level circuit simulations or switch-level circuit simulations; and
performing passing test pattern simulations to determine inter-cell bridge suspects from the initial inter-cell bridge suspects.
2. The method recited in claim 1 , wherein the defect candidate sites are determined based on path-tracing from the failing bits into a circuit design of the circuit or based on a fault dictionary.
3. The method recited in claim 1 , wherein the faults comprise stuck-at faults.
4. The method recited in claim 1 , wherein the faults comprise faults for cell internal defects.
5. The method recited in claim 1 , wherein the electrical information of the circuit further comprises switch-level netlists of the cells or transistor-level netlists of the cells, the determining initial inter-cell bridge suspects is further based on driving strengths derived based on the switch-level netlists of the cells or the transistor-level netlists of the cells.
6. The method recited in claim 5 , wherein the determining initial inter-cell bridge suspects is further based on faults for cell internal defects and the failing test pattern simulations.
7. The method recited in claim 1 , further comprising:
determining final defect suspects from the inter-cell defect suspects and other defect suspects determined based on the failing test pattern simulations and the passing test pattern simulations.
8. One or more non-transitory computer-readable media storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:
performing failing test pattern simulations to determine initial defect suspects based on injecting faults to defect candidate sites, the defect candidate sites determined based on test responses, the test responses obtained by applying test patterns to a circuit for testing, and the test responses comprising failing bits;
determining initial inter-cell bridge suspects from cells in the initial defect suspects based on layout information and electrical information of the circuit, the determining comprising identifying pairs of neighboring cells based on the layout information, the electrical information of the circuit comprising cell internal signal information which is obtained based on transistor-level circuit simulations or switch-level circuit simulations; and
performing passing test pattern simulations to determine inter-cell bridge suspects from the initial inter-cell bridge suspects.
9. The one or more non-transitory computer-readable media recited in claim 8 , wherein the defect candidate sites are determined based on path-tracing from the failing bits into a circuit design of the circuit or based on a fault dictionary.
10. The one or more non-transitory computer-readable media recited in claim 8 , wherein the faults comprise stuck-at faults.
11. The one or more non-transitory computer-readable media recited in claim 8 , wherein the faults comprise faults for cell internal defects.
12. The one or more non-transitory computer-readable media recited in claim 8 , wherein the electrical information of the circuit further comprises switch-level netlists of the cells or transistor-level netlists of the cells, the determining initial inter-cell bridge suspects is further based on driving strengths derived based on the switch-level netlists of the cells or the transistor-level netlists of the cells.
13. The one or more non-transitory computer-readable media recited in claim 12 , wherein the determining initial inter-cell bridge suspects is further based on faults for cell internal defects and the failing test pattern simulations.
14. The one or more non-transitory computer-readable media recited in claim 8 , wherein the method further comprises:
determining final defect suspects from the inter-cell defect suspects and other defect suspects determined based on the failing test pattern simulations and the passing test pattern simulations.
15. A system, comprising:
one or more processors, the one or more processors programmed to perform a method, the method comprising:
performing failing test pattern simulations to determine initial defect suspects based on injecting faults to defect candidate sites, the defect candidate sites determined based on test responses, the test responses obtained by applying test patterns to a circuit for testing, and the test responses comprising failing bits;
determining initial inter-cell bridge suspects from cells in the initial defect suspects based on layout information and electrical information of the circuit, the determining comprising identifying pairs of neighboring cells based on the layout information, the electrical information of the circuit comprising cell internal signal information which is obtained based on transistor-level circuit simulations or switch-level circuit simulations; and
performing passing test pattern simulations to determine inter-cell bridge suspects from the initial inter-cell bridge suspects.
16. The system recited in claim 15 , wherein the defect candidate sites are determined based on path-tracing from the failing bits into a circuit design of the circuit or based on a fault dictionary.
17. The system recited in claim 15 , wherein the faults comprise stuck-at faults, faults for cell internal defects, or both.
18. The system recited in claim 15 , wherein the electrical information of the circuit further comprises switch-level netlists of the cells or transistor-level netlists of the cells, the determining initial inter-cell bridge suspects is further based on driving strengths derived based on the switch-level netlists of the cells or the transistor-level netlists of the cells.
19. The system recited in claim 15 , wherein the method further comprises:
determining final defect suspects from the inter-cell defect suspects and other defect suspects determined based on the failing test pattern simulations and the passing test pattern simulations.