Apparatus for radiation detection in a digital imaging system
The disclosure is directed at a detector element that includes a conductive shield electrode, or shield electrode layer that can assist in reducing breakdown and also improve the reliability of the detector element. The detector element includes a substrate layer that supports at least two electrodes and a semiconducting layer. A shield electrode layer is deposited or patterned adjacent at least one of the two electrodes.
1. A detector element for a digital imaging system comprising:
a first electrode;
a second electrode;
a semiconducting layer, located between the first and second electrode; and
at least one conductive shielding electrode located in a shielding electrode plane parallel to one of the first or second electrode;
wherein the shielding electrode plane is different than a plane of the first or second electrode; and
wherein the first and second electrode are horizontally spaced and do not overlap each other.
2. The detector element of claim 1 further comprising at least one blocking layer.
3. The detector element of claim 2 further comprising an antireflective layer.
4. The detector element of claim 2 wherein the blocking layer is one of an insulating blocking layer, an ohmic blocking layer and a Schottky blocking layer.
5. The detector element of claim 1 further comprising a substrate layer.
6. The detector element of claim 5 wherein the shielding electrode is adjacent the substrate layer.
7. The detector element of claim 5 wherein the shielding electrode is away from the substrate layer.
8. The detector element of claim 7 wherein the shielding electrode is transparent.
9. The detector element of claim 5 wherein the shielding electrode extends a width of the substrate layer.
10. The detector element of claim 1 wherein the shielding electrode shapes an electric field near or around at least one of the first or second electrode.
11. The detector element of claim 1 wherein the shielding electrode layer shapes an electric field between the first and second electrode.
12. The detector element of claim 1 wherein the shielding electrode is manufactured from a conductive material.
13. The detector element of claim 12 wherein the conductive material is aluminum, chrome, molybdenum or indium tin oxide.
14. The detector element of claim 1 wherein the semiconductor layer is manufactured from at least one of amorphous silicon, metal-oxide, polysilicon and an organic semiconductor material.
15. The detector element of claim 14 wherein the blocking layer is manufactured from at least one of polyimide, benzocyclobutane (BCB), parylene, polystyrene or polysiloxane.
16. The detector element of claim 1 wherein the detector element is a Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) detector element.
17. The detector element of claim 1 wherein the shielding electrode overlaps at most one of the first electrode or second electrode.
18. The detector element of claim 17 wherein the shielding electrode overlaps only one of the first electrode or second electrode.
19. The detector element of claim 18 wherein the shielding electrode partially or fully overlaps the one of the first electrode or second electrode.
20. The detector element of claim 17 wherein the shielding electrode does not overlap either the first electrode or second electrode.