Electronic device and circuit including a transistor and a variable resistor
In an aspect, a circuit can include drain and source terminals; a HEMT having a drain and a source, wherein the drain is coupled to the drain terminal; and a variable resistor having a first electrode and a second electrode. The first electrode can be coupled to the source of the HEMT, and the second electrode can be coupled to the source terminal. In another aspect, an electronic device can include a source terminal; a heterojunction between a channel layer and a barrier layer; a source electrode of a HEMT overlying the channel layer; a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.
1. An electronic device comprising:
a source terminal;
a heterojunction between a channel layer and a barrier layer;
a source electrode of a high electron mobility transistor overlying the channel layer;
a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and
a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.
2. The electronic device of claim 1 , wherein the variable resistor has a corresponding distance in a range from approximately 0.5 microns to 50 microns.
3. The electronic device of claim 1 , wherein the high electron mobility transistor and the variable resistor are on a same die.
4. The electronic device of claim 1 , wherein the variable resistor has a resistance that increases exponentially with a linear increase in voltage across the variable resistor.
5. The electronic device of claim 1 , further comprising a second resistor electrode that is coupled to the source electrode.
6. The electronic device of claim 5 , further comprising an inductor that includes a first electrode coupled to the source electrode and a second electrode coupled to the second resistor electrode.
7. The electronic device of claim 6 , wherein the inductor is a planar inductor.
8. The electronic device of claim 6 , further comprising an interconnect that electrically connects the inductor and the second resistor electrode to each other.
9. The electronic device of claim 5 , wherein the first resistor electrode includes first projections extending toward the second resistor electrode, and the second resistor electrode includes second projections extending toward the first resistor electrode.
10. The electronic device of claim 1 , further comprising a field electrode that overlies a portion of the variable resistor.
11. The electronic device of claim 10 , wherein the field electrode is electrically connected to the first resistor electrode.
12. The electronic device of claim 10 , wherein the variable resistor has a corresponding distance, and the field electrode extends over the variable resistor in a range from 5% to 50% of the corresponding distance.
13. The electronic device of claim 12 , further comprising a source bond pad electrically connected to the first resistor electrode, and a drain bond pad electrically connecting to the drain electrode of the high electron mobility transistor.
14. The electronic device of claim 12 , further comprising a source plate overlying and electrically connected to the first resistor electrode, and a drain plate overlying and electrically connected to the drain electrode of the high electron mobility transistor.
15. The electronic device of claim 14 , wherein the source plate overlies a portion of the drain electrode of the high electron mobility transistor, and the drain plate overlies a portion of source electrode of the high electron mobility transistor.
16. The electronic device of claim 1 , further comprising a gate electrode of the high electron mobility transistor and a drain electrode of the high electron mobility transistor.
17. A circuit comprising:
a drain terminal and a source terminal;
a high electron mobility transistor having a drain and a source, wherein the drain is coupled to the drain terminal of the circuit;
a variable resistor having a first electrode and a second electrode, wherein:
the first electrode is coupled to the source of the high electron mobility transistor,
the second electrode is coupled to the source terminal of the circuit, and
the variable resistor has a resistance that varies as a function of at least a voltage across the variable resistor; and
an inductor having a first electrode and a second electrode, wherein the first electrode of the inductor is coupled to the source of the high electron mobility transistor, and the second electrode of the inductor is electrically connected to the first electrode of the variable resistor.
18. The circuit of claim 17 , further comprising a control terminal coupled to a gate of the high electron mobility transistor.