Magnetic diode in artificial magnetic honeycomb lattice
A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein: (a) the hexagonal cylindrical pores: (i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and (ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and (b) the connecting elements comprise a magnetic material layer, and the connecting elements have: (i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm; (ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and (iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and (c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm 2 to about 900 mm 2 .
1. A magnetic artificial honeycomb lattice comprising a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein:
(a) the hexagonal cylindrical pores:
(i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm; and
(ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and
(b) the connecting elements comprise a magnetic material layer, and the connecting elements have:
(i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm;
(ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and
(iii) a thickness of the magnetic material layer that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm; and
(c) the magnetic artificial honeycomb lattice has a surface area, disregarding the presence of the hexagonal cylindrical pores, that is in a range in a range of about 100 mm 2 to about 900 mm 2 .
2. The magnetic artificial honeycomb lattice of claim 1 , wherein:
the surface area of the substrate is in a range 225 mm 2 to about 400 mm 2 and a thickness in a range of about 34 nm to about 36 nm;
the average depth of the hexagonal cylindrical pores is in a range of about 8 nm to about 10 nm;
the average length of the connecting elements is in a range of about 12 nm to about 14 nm and the average width of the connecting elements is in a range of about 4 nm to about 6 nm; and
the average thickness of the magnetic material layer is in a range of about 4 nm to about 7 nm.
3. The magnetic artificial honeycomb lattice of claim 1 , wherein the average length of the connecting elements (l) and the average thickness of the magnetic material layer of the connecting element (t) are at an aspect ratio of l/t that is in a range of about 1.25 to about 7.5.
4. The magnetic artificial honeycomb lattice of claim 1 , wherein the average length of the connecting elements of the artificial honeycomb lattice (l) and the average thickness of the magnetic layer (t) are at an aspect ratio of l/t that is in a range of about 2 to about 3.
5. The magnetic artificial honeycomb lattice of claim 1 , wherein the magnetic material is selected from the group consisting of nickel, iron, cobalt, molybdenum, one or more Permalloys, and combinations or mixtures, or alloys thereof.
6. The magnetic artificial honeycomb lattice of claim 1 , wherein the magnetic material is a Permalloy comprising 80% Ni, 14.48% Fe, 5% Mo 0.5% Si, and 0.02% Cu.
7. The magnetic artificial honeycomb lattice of claim 1 , wherein the magnetic artificial honeycomb lattice exhibits asymmetric differential electrical conductance (or unidirectional electronic transport) without application of magnetic field when at a temperature in a range of about 60 K to about 300 K and subjected to a current in a range of about 15 μA to about −15 μA, wherein the conductance increases by at least two orders of magnitude for one current bias compared to a zero bias.
8. The magnetic artificial honeycomb lattice of claim 7 , wherein the temperature of the magnetic artificial honeycomb lattice is in a range of about 150 K to about 275 K.
9. The magnetic artificial honeycomb lattice of claim 7 , wherein the temperature of the magnetic artificial honeycomb lattice is in a range of about 200 K to about 250 K.
10. The magnetic artificial honeycomb lattice of claim 1 , wherein the connecting elements further comprise a layer of non-magnetic, protective material on the magnetic material layer to prevent or limit oxidation or other corrosion of the magnetic material.
11. A method of adjusting the degree of the asymmetric differential electrical conductance (or unidirectional electronic transport) of the magnetic artificial honeycomb lattice of claim 7 without varying the amount of current or the current bias, the method comprising:
(a) varying the temperature of the magnetic artificial honeycomb lattice;
(b) applying a magnetic field to the magnetic artificial honeycomb lattice; or
(c) both (a) and (b).
12. A method of making a making a magnetic artificial honeycomb lattice, the method comprising depositing a layer of magnetic material on a substrate, wherein:
the substrate comprises an artificial honeycomb lattice topography, wherein the artificial lattice topography is over a surface area of the substrate that is in a range in a range of about 100 mm 2 to about 900 mm 2 , and wherein the artificial lattice topography comprises a multiplicity of connecting elements separated by hexagonal cylindrical pores, wherein;
(a) the hexagonal cylindrical pores:
(i) have widths that are substantially uniform and an average width that is in a range of about 15 nm to about 20 nm;
(ii) are substantially equispaced and have an average center-to-center distance that is in a range of about 25 nm to about 35 nm; and
(iii) have depths extending inward from the surface of the substrate that are substantially uniform and an average depth that is in a range of about 5 nm to about 10 nm; and
(b) the connecting elements have:
(i) lengths that are substantially uniform and an average length that is in a range of about 10 nm to about 15 nm;
(ii) widths that are substantially uniform and an average width that is in a range of about 4 nm to about 8 nm; and
(iii) heights that are substantially uniform corresponding to the depths of the hexagonal cylindrical pores; and
wherein the layer of magnetic material is deposited on substantially only the uppermost surfaces of the connecting elements of the artificial honeycomb lattice topography of the substrate, and wherein the magnetic material layer has a thickness that is substantially uniform and an average thickness that is in a range of about 2 nm to about 8 nm.
13. The method of claim 2 , wherein:
the surface area of the substrate is in a range 225 mm 2 to about 400 mm 2 and a thickness in a range of about 34 nm to about 36 nm;
the average depth of the hexagonal cylindrical pores is in a range of about 8 nm to about 10 nm;
the average length of the connecting elements is in a range of about 12 nm to about 14 nm and the average width of the connecting elements is in a range of about 4 nm to about 6 nm; and
the average thickness of the magnetic material layer is in a range of about 4 nm to about 7 nm.
14. The method of claim 12 , wherein the average length of the connecting elements of the artificial honeycomb lattice ( I ) and the average thickness of the magnetic layer ( t ) are at an aspect ratio of l/t that is in a range of about 1.25 to about 7.5.
15. The method of claim 12 , wherein the average length of the connecting elements of the artificial honeycomb lattice ( I ) and the average thickness of the magnetic layer ( t ) are at an aspect ratio of lit that is in a range of about 2 to about 3.
16. The method of claim 12 , wherein:
the substrate is that is on a substrate is selected from the group consisting of silicon nitride (Si 3 N 4 ), and a single-crystal silicon wafer; and
the magnetic material is selected from the group consisting of nickel, iron, cobalt, molybdenum, one or more Permalloys, and combinations or mixtures, or alloys thereof.
17. The method of claim 16 , wherein:
the substrate is a single-crystal silicon wafer; and
the magnetic material is a Permalloy comprising 80% Ni, 14.48% Fe, 5% Mo 0.5% Si, and 0.02% Cu.
18. The method of claim 12 , wherein the depositing of the layer of the magnetic material on substantially only the uppermost surfaces of the connecting elements of the artificial honey comb lattice topography of the substrate comprises depositing the magnetic material from a surface of an evaporation source via electron- beam evaporation, wherein the uppermost surfaces of the connecting elements are maintained in a near parallel orientation relative to a direction perpendicular to the surface of the evaporation source while the substrate is rotated about a central axis at a substantially constant rate.
19. The method of claim 18 , wherein the near parallel orientation comprises an angle between the perpendicular direction and the uppermost surfaces of the connecting elements of the artificial honey comb lattice topography that is in a range of about 1° to about 2 ° .
20. The method of claim 12 , further comprising depositing a layer of non-magnetic, protective material on the layer of the magnetic material to prevent or limit oxidation or other corrosion of the magnetic material.