Multi-gate semiconductor device and method for forming the same
A multi-gate semiconductor structure includes a plurality of nanowires, a gate structure disposed over the plurality of nanowires, and source/drain structures at two ends of each of the plurality of nanowires. The source/drain structures include a conductor, and a bottom surface of the conductor is lower than the plurality of nanowires.
1. A multi-gate semiconductor structure comprising:
a plurality of nanowires;
a gate structure disposed over the plurality of nanowires;
source/drain structures at two ends of each of the plurality of nanowires, wherein the source/drain structures comprise a semiconductor layer;
a silicide layer formed over the source/drain structures; and
a contact plug formed over the silicide layer, wherein a bottom surface of the contact plug is lower than the plurality of nanowires.
2. The multi-gate semiconductor structure of claim 1 , wherein each of the semiconductor layer and the metal silicide layer substantially includes a U shape.
3. The multi-gate semiconductor structure of claim 1 , wherein a top surface of the contact plug is higher than a top surface of the gate structure.
4. The multi-gate semiconductor structure of claim 1 , wherein the gate structure comprises a metal gate structure.
5. The multi-gate semiconductor device of claim 1 , wherein the semiconductor layer of the source/drain structures comprises a doped epitaxial semiconductor layer.
6. The multi-gate semiconductor device of claim 1 , wherein the contact plug comprises an upper portion and a lower portion, and the metal silicide layer is sandwiched between the lower portion and the semiconductor layer.
7. The multi-gate semiconductor device of claim 1 , wherein the semiconductor layer partially overlaps the nanowires.
8. A multi-gate semiconductor device comprising:
a plurality of first nanowires and a plurality of second nanowires;
a first gate structure disposed over the plurality of first nanowires and a second gate structure disposed over a first portion of the plurality of second nanowires;
first source/drain structures disposed at two ends of each of the plurality of first nanowires, the first source/drain structure comprising a conductor, a first semiconductor layer disposed around a bottom and sidewalls of a portion of the conductor, and a first metal silicide layer disposed between the conductor and the first semiconductor layer; and
second source/drain structures disposed at two ends of each of the first portions of the second nanowires, the second source/drain structure comprising a second portion of the plurality of second nanowires, a second metal silicide layer disposed over the second portions of the second nanowires, and a second semiconductor layer disposed between the second metal silicide layer and the second portions of the second nanowires.
9. The multi-gate semiconductor device of claim 8 , wherein a bottom surface of the conductor of the first source/drain structures is lower than the plurality of first nanowires.
10. The multi-gate semiconductor device of claim 9 , wherein the plurality of second nanowires comprise a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is greater than a lattice constant of the first semiconductor material.
11. The multi-gate semiconductor device of claim 10 , wherein the first metal silicide layer comprises the first semiconductor material and a first metal material.
12. The multi-gate semiconductor device of claim 11 , wherein the second metal silicide layer comprises the first semiconductor material, the second semiconductor material and a second metal material.
13. The multi-gate semiconductor device of claim 12 , wherein the first metal material and the second metal material are different.
14. The multi-gate semiconductor device of claim 12 , wherein the first metal material and the second metal material are the same.
15. The multi-gate semiconductor device of claim 8 , wherein the first semiconductor layer comprises a first epitaxial semiconductor material.
16. The multi-gate semiconductor device of claim 15 , wherein the second semiconductor layer comprises the first epitaxial semiconductor material and a second epitaxial semiconductor material, and a lattice constant of the second epitaxial semiconductor material is greater than a lattice constant of the first epitaxial semiconductor material.
17. A multi-gate semiconductor device comprising:
a plurality of first nanowires and a plurality of second nanowires;
a first gate structure disposed over the plurality of first nanowires and a second gate structure disposed over a first portion of the plurality of second nanowires;
first source/drain structures disposed at two ends of each of the plurality of first nanowires, the first source/drain structure comprising a first semiconductor layer covering the two ends of each of the plurality of first nanowires; and
second source/drain structures disposed at two ends of each of the first portions of the second nanowires, the second source/drain structure comprising a second portion of the plurality of second nanowires and a second semiconductor layer surrounding the second portions of the plurality of second nanowires.
18. The multi-gate semiconductor device of claim 17 , wherein the first source/drain structure further comprises a conductor and a first metal silicide layer disposed between the first semiconductor layer and a portion of the conductor.
19. The multi-gate semiconductor device of claim 17 , wherein the second source/drain structure further comprises a second metal silicide layer disposed layer disposed over the second semiconductor layer.
20. The multi-gate semiconductor device of claim 17 , wherein the first semiconductor layer comprises first dopants, and the second semiconductor layer comprises a second dopants complementary to the first dopants.