Magnetic recording medium and magnetic storage apparatus
View Patent ↗A magnetic recording medium includes a substrate, a barrier layer, a crystal grain size control layer, and a magnetic layer that are arranged in this order. The barrier layer includes at least one of oxides, nitrides, and carbides, and the crystal grain size control layer is a crystalline layer including Ag and having an average thickness in a range of 0.1 nm to 1 nm. The barrier layer makes contact with the crystal grain size control layer, and the magnetic layer includes an alloy having a L1 0 crystal structure and a (001) face orientation.
1. A magnetic recording medium comprising:
a substrate, a barrier layer, a crystal grain size control layer, and a magnetic layer that are arranged in this order,
wherein the barrier layer includes at least one of oxides, nitrides, and carbides,
wherein the crystal grain size control layer is a crystalline layer including Ag and having an average thickness in a range of 0.1 nm to 1 nm,
wherein the barrier layer makes contact with the crystal grain size control layer, and
wherein the magnetic layer includes an alloy having a L1 0 crystal structure and a (001) face orientation.
2. The magnetic recording medium as claimed in claim 1 , wherein the crystal grain size control layer includes crystalline point-like precipitates including Ag.
3. The magnetic recording medium as claimed in claim 1 , wherein the crystal grain size control layer includes one or more added materials selected from a group consisting of B, C, Si, Ge, Cu, Ni, Ti, Sn, BN, and MgO.
4. The magnetic recording medium as claimed in claim 3 , wherein the crystal grain size control layer includes the one or more added materials in a range of 5 mol % to 60 mol %.
5. The magnetic recording medium as claimed in claim 4 , wherein the barrier layer includes one or more materials selected from a group consisting of MgO, TiO, NiO, TiN, TaN, HfN, NbN, ZrC, HfC, TaC, NbC, and TiC.
6. The magnetic recording medium as claimed in claim 1 , wherein the barrier layer includes one or more materials selected from a group consisting of MgO, TiO, NiO, TiN, TaN, HfN, NbN, ZrC, HfC, TaC, NbC, and TiC.
7. The magnetic recording medium as claimed in claim 2 , wherein the crystal grain size control layer includes one or more added materials selected from a group consisting of B, C, Si, Ge, Cu, Ni, Ti, Sn, BN, and MgO.
8. The magnetic recording medium as claimed in claim 7 , wherein the crystal grain size control layer includes the one or more added materials in a range of 5 mol % to 60 mol %.
9. The magnetic recording medium as claimed in claim 2 , wherein the barrier layer includes one or more materials selected from a group consisting of MgO, TiO, NiO, TiN, TaN, HfN, NbN, ZrC, HfC, TaC, NbC, and TiC.
10. A magnetic storage apparatus comprising:
the magnetic recording medium according to claim 1 ; and
a magnetic head configured to write information to and read information from the magnetic recording medium.
11. A magnetic storage apparatus comprising:
a magnetic recording medium;
a magnetic head configured to write information to and read information from the magnetic recording medium; and
a casing configured to accommodate the magnetic recording medium and the magnetic head,
wherein the magnetic head includes a laser light generator configured to generate laser light, a waveguide configured to guide the laser light to a tip end of the magnetic head, and a near-field light generator configured to generate near-field light that heats the magnetic recording medium,
wherein the magnetic recording medium includes a substrate, a barrier layer, a crystal grain size control layer, and a magnetic layer that are arranged in this order,
wherein the barrier layer includes at least one of oxides, nitrides, and carbides,
wherein the crystal grain size control layer is a crystalline layer including Ag and having an average thickness in a range of 0.1 nm to 1 nm,
wherein the barrier layer makes contact with the crystal grain size control layer, and
wherein the magnetic layer includes an alloy having a L1 0 crystal structure and a (001) face orientation.
12. The storage apparatus as claimed in claim 11 , wherein the crystal grain size control layer of the magnetic recording medium includes crystalline point-like precipitates including Ag.
13. The magnetic storage apparatus as claimed in claim 11 , wherein the crystal grain size control layer of the magnetic recording medium includes one or more added materials selected from a group consisting of B, C, Si, Ge, Cu, Ni, Ti, Sn, BN, and MgO.
14. The magnetic storage apparatus as claimed in claim 13 , wherein the crystal grain size control layer of the magnetic recording medium includes the one or more added materials in a range of 5 mol % to 60 mol %.
15. The magnetic storage apparatus as claimed in claim 11 , wherein the barrier layer of the magnetic recording medium includes one or more materials selected from a group consisting of MgO, TiO, NiO, TiN, TaN, HfN, NbN, ZrC, HfC, TaC, NbC, and TiC.