Discrete dynode electron multiplier fabrication method

1. A process of manufacturing a discrete-dynode electron multiplier (DDEM) comprising the steps of:

mounting at least one insulator block to a monolithic conductor block;

forming a series of ion-optics geometrical structures in the monolithic conductor block, each ion-optics geometrical structure having a smallest dimension of less than 1 millimeter;

forming an opening in the monolithic conductor block; and

connecting a circuit board to the DDEM by positioning a fastener through the opening in the monolithic conductor block and through an opening in the circuit board.

2. The process of claim 1 , wherein the forming steps are performed by electrical discharge machining (EDM), laser cutting, and/or water jet cutting.

3. The process of claim 1 , wherein the mounting step further comprises mounting two insulator blocks to opposing sides of the monolithic conductor block.

4. The process of claim 1 , wherein the series of ion-optics geometrical structures comprise a series of alternating fingers and slots in the block of conductive material.

5. The process of claim 4 , wherein one of the fingers and/or slots is curved in a direction along the smallest dimension.

6. A process of manufacturing a discrete-dynode electron multiplier (DDEM) comprising the steps of:

mounting a monolithic conductor block between two insulator blocks; and

forming a series of ion-optics geometrical structures in the monolithic conductor block, each ion-optics geometrical structure having a smallest dimension of less than 1 millimeter.

7. The process of claim 6 , wherein the monolithic conductor block is sandwiched between the two insulator blocks.

8. The process of claim 6 , wherein the mounting step comprises either bonding or brazing the conductor block to both insulator blocks.

9. The process of claim 6 , wherein the DDEM has a U-shape, an L-shape, a circular shape, an annular shape, a rectangular shape or a square shape.

10. The process of claim 1 further comprising mounting a second insulator block to a side of the monolithic conductor block that is opposite said at least one insulator block.

11. The process of claim 10 , wherein said at least one insulator block and the monolithic conductor block form a first dynode array, and said second insulator block and the monolithic conductor block form a second dynode array, wherein the first dynode array and the second dynode array face each other and are at least partially spaced apart by a pre-determined distance to form an input end of the DDEM, an output end of the DDEM, and an ion path between the input end and the output end.

12. The process of claim 6 , wherein the forming step forms a first dynode array having ion-optics geometrical structures, a second dynode array having ion-optics geometrical structures, wherein the first dynode array and the second dynode array face each other and are at least partially spaced apart by a pre-determined distance to form an input end of the DDEM, an output end of the DDEM, and an ion path between the input end and the output end.