Three-dimensional semiconductor devices including vertical structures with varied spacing
A three-dimensional semiconductor device is disclosed. The device may include an electrode structure that can include a plurality of electrodes that are stacked on a substrate and extend in a first direction. Vertical structures can penetrate the electrode structure to provide a plurality of columns spaced apart from each other in a second direction crossing the first direction. The plurality of columns can include first and second edge columns located adjacent to respective opposite edges of the electrode structure, and the plurality of columns can include a center column located between the first and second edge columns. Distances between adjacent ones of the plurality of columns can decrease in a direction from the first and second edge columns toward the center column.
1. A three-dimensional semiconductor device, comprising:
an electrode structure including a plurality of electrodes stacked on a substrate and extending in a first direction; and
vertical structures penetrating the electrode structure to provide a plurality of columns spaced apart from each other in a second direction crossing the first direction,
wherein each of the plurality of columns includes the vertical structures arranged in the first direction,
the plurality of columns include first and second edge columns located adjacent to respective opposite edges of the electrode structure, and the plurality of columns including a center column located between the first and second edge columns, and
distances between adjacent ones of the plurality of columns decrease in a direction from the first edge column toward the center column.
2. The device of claim 1 , wherein the adjacent ones of the plurality of columns are shifted in the first direction relative to one another.
3. The device of claim 1 , wherein, at least one of the plurality of columns, the vertical structures arranged in the first direction are spaced apart from each other by substantially equal distances.
4. The device of claim 3 , wherein, in each of the plurality of columns, the vertical structures in the first direction are spaced apart from each other by substantially equal distances.
5. The device of claim 1 , wherein the electrode structure comprises an upper selection electrode and a plurality of cell electrodes located below the upper selection electrode, wherein the device further comprises:
a dummy insulating separation layer penetrating the upper selection electrode; and
wherein the vertical structures included in the center column penetrate the dummy insulating separation layer.
6. The device of claim 5 , wherein the vertical structures are arranged to have mirror symmetry with respect to the dummy insulating separation layer.
7. The device of claim 1 , wherein the electrode structure is provided between adjacent common source regions extending in the first direction, and
the respective opposite edges of the electrode structure face the adjacent common source regions, when viewed in a plan view.
8. The device of claim 1 , wherein shortest distances between the vertical structures, which are respectively selected from the plurality of columns and are closest to each other, decrease in a direction from the first or second edge columns toward the center column.