Packaged semiconductor devices with laser grooved wettable flank and methods of manufacture
In a general aspect, a method for producing a packaged semiconductor device can include coupling a semiconductor device to a leadframe structure having a signal lead that is electrically coupled with the semiconductor device. The method can also include encapsulating at least a portion of the semiconductor device and at least a portion of the leadframe structure in a molding compound. At least a segment of the signal lead can be exposed outside the molding compound. A surface of the molding compound can define a primary plane of the packaged semiconductor device. The method can further include forming, with a laser, a groove in the segment, applying solder plating to the segment, including the groove, and separating, at the groove, the segment into a first portion and a second portion, such that the second portion of the segment is separated from the leadframe structure.
1. A method of producing a packaged semiconductor device, the method comprising:
coupling a semiconductor device to a metal leadframe structure, the metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure in a molding compound, at least a segment of the signal lead being exposed outside the molding compound, a surface of the molding compound defining a primary plane of the packaged semiconductor device;
forming, with a laser, a groove in the segment of the signal lead;
applying solder plating to the segment of the signal lead, including the groove; and
separating, at the groove, the segment of the signal lead into a first portion and a second portion, such that the second portion of the segment of the signal lead is separated from the metal leadframe structure,
the separating the segment of the signal lead defines a signal lead flank on an end of the first portion of the segment of the signal lead, the signal lead flank having a surface area, a first portion of the surface area of the signal lead flank being defined by the solder plating, and a second portion of the surface area of the flank of the signal lead defined by exposed metal of the metal leadframe structure.
2. The method claim 1 , wherein a center portion of the surface of the exposed metal has a height along an axis that is approximately orthogonal with the primary plane of the packaged semiconductor device, the height of the center portion being greater than a height, along the axis that is approximately orthogonal with the primary plane of the packaged semiconductor device, of a portion of the surface of the exposed metal that is laterally disposed from the center portion of the surface of the exposed metal.
3. The method of claim 1 , wherein a perimeter of the surface of the exposed metal has at least one curved edge.
4. The method of claim 1 , wherein a perimeter of the surface of the exposed metal is semicircle shaped.
5. The method of claim 1 , wherein the surface of the exposed metal is surrounded by the solder plating.
6. A method of producing a packaged semiconductor device, the method comprising:
coupling a semiconductor device to a metal leadframe structure, the metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure in a molding compound, at least a segment of the signal lead being exposed outside the molding compound, a surface of the molding compound defining a primary plane of the packaged semiconductor device;
forming, with a laser, a groove in the segment of the signal lead;
applying a solder plating to the segment of the signal lead, including the groove; and
separating, at the groove, the segment of the signal lead into a first portion and a second portion, such that the second portion of the segment of the signal lead is separated from the metal leadframe structure and a flank of the signal lead is defined at an end of the first portion of the segment of the signal lead,
wherein the flank of the signal lead has a surface area, the surface area of the flank of the signal lead having a first portion and a second portion, the first portion being defined by the groove, the second portion being defined by the separation of the segment of the signal lead into the first portion and the second portion, exposed metal leadframe structure being included in the second portion of the surface area of the flank.
7. The method of claim 6 , wherein:
the first portion of the surface area of the flank of the signal lead includes at least 75% of the surface area of the flank of the signal lead, and is defined by the solder plating, and
the second portion of the surface area of the flank of the signal lead includes 25% or less of the surface area of the flank of the signal lead, and is defined by exposed metal of the metal leadframe structure.
8. The method of claim 7 , wherein a perimeter of a surface of the exposed metal has at least one curved edge.
9. The method of claim 6 , wherein separating the segment of the signal lead includes cleaving the metal leadframe structure.
10. The method of claim 6 , wherein separating the segment of the signal lead includes sawing the metal leadframe structure.
11. The method of claim 6 , wherein:
wherein the first portion of the surface area of the flank of the signal lead is defined by the solder plating, and the second portion of the surface area of the flank of the signal lead is defined by exposed metal of the metal leadframe structure; and
the molding compound defines a primary plane of the packaged semiconductor device, a center portion of a cross-sectional profile of the surface of the exposed metal of the second portion of the surface area the flank of the signal lead having a height along an axis that is approximately orthogonal to the primary plane of the packaged semiconductor device, the height of the center portion being greater than a height of a portion of the cross-sectional profile of the surface of the exposed metal of the second portion of the surface area of the flank of the signal lead that is laterally disposed from the center portion.
12. The method of claim 11 , wherein a perimeter of a surface of the exposed metal is crescent shaped.
13. The method of claim 11 , wherein a perimeter of a surface of the exposed metal is semicircle shaped.
14. The method of claim 6 , wherein the portion of the signal lead that is exposed outside the molding compound extends away from a surface of the molding compound, such that the flank of the signal lead is spaced a distance from the surface of the molding compound.
15. The method of claim 6 , wherein the flank of the signal lead is substantially coplanar with a surface of the molding compound.
16. A method of producing a packaged semiconductor device, the method comprising:
coupling a semiconductor device to a metal leadframe structure, the metal leadframe structure having a signal lead that is electrically coupled with the semiconductor device;
encapsulating at least a portion of the semiconductor device and at least a portion of the metal leadframe structure in a molding compound, at least a segment of the signal lead being exposed outside the molding compound, a surface of the molding compound defining a primary plane of the packaged semiconductor device;
forming, with a laser, a groove in the segment of the signal lead;
applying a solder plating to the segment of the signal lead, including the groove; and
separating, at the groove, the segment of the signal lead into a first portion and a second portion, such that the second portion of the segment of the signal lead is separated from the metal leadframe structure and a flank of the signal lead is defined at an end of the first portion of the segment of the signal lead,
the flank of the signal lead having a surface area, a first portion of the surface area of the flank of the signal lead being defined by the solder plating, and a second portion of the surface area of the flank of the signal lead being defined by exposed metal of the metal leadframe structure, the surface area of the flank being a discontinuous surface area, a perimeter of a surface of the exposed metal being crescent shaped or semicircular shaped, a center portion of the surface of the exposed metal having a height along an axis that is approximately orthogonal with a primary plane of the packaged semiconductor device, the primary plane of the packaged semiconductor device being defined by the molding compound, the height of the center portion being greater than a height, along the axis that is approximately orthogonal with the primary plane of the packaged semiconductor device, of a portion of the surface of the exposed metal that is laterally disposed from the center portion of the surface of the exposed metal.
17. The method of claim 16 , wherein the flank of the signal lead is disposed at an end of the signal lead, the discontinuous surface area of the flank including the first portion of the surface area of the flank of the signal lead and the second portion of the surface area of the flank of the signal lead, the first portion of the surface area of the flank of the signal lead being defined by the groove, the second portion of the surface area of the flank of the signal lead being defined by cleaving the metal leadframe structure, the surface of the exposed metal being included in the second portion of the surface area of the flank of the signal lead.
18. The method of claim 17 , the discontinuous surface area of the flank further including a third portion disposed between the first portion of the discontinuous surface area of the flank and the second portion of the discontinuous surface area of the flank.
19. The method of claim 16 , wherein the flank of the signal lead is disposed at an end of the signal lead, the discontinuous surface area of the flank including the first portion of the surface area of the flank of the signal lead and the second portion of the surface area of the flank of the signal lead, the first portion of the surface area of the flank of the signal lead being defined by the groove, the second portion of the surface area of the flank of the signal lead being defined by sawing the metal leadframe structure, the surface of the exposed metal being included in the second portion of the surface area of the flank of the signal lead.