Selective Molecular Layer Deposition Of Organic And Hybrid Organic-Inorganic Layers
Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.
1 . A method of depositing a film comprising:
providing a substrate comprising a first material having a hydrogen terminated surface and a second material having a hydroxyl terminated surface;
exposing the substrate to a modifying compound comprising a modifying species that reacts with the hydroxyl terminated surface of the second material to form a modified second surface on the second material; and
exposing the substrate to one or more deposition gases which react with the modified second surface of the second material to form a film on the second material,
wherein the modifying species has a general formula (RO) 3 Si-L-Si(OR) 3 where each R is independently selected from C1-C4 alkyl groups and L is an aromatic moiety or a carbon chain comprising 1 to 3 carbon atoms.
2 . The method of claim 1 , wherein the first material comprises silicon and the second material comprises silicon oxide.
3 . The method of claim 1 , wherein R consists essentially of methyl.
4 . The method of claim 1 , wherein L is a phenyl group.
5 . The method of claim 4 , wherein the phenyl group has the silicon atoms in a para position.
6 . The method of claim 1 , wherein L is —(CH 2 ) 2 —.
7 . The method of claim 1 , wherein L contains at least one double bond.
8 . The method of claim 7 , wherein L is —CH═CH—.
9 . A molecular layer deposition method comprising:
exposing a substrate surface to a first deposition gas comprising one or more compounds with a general structure of:
where a ring of the first deposition gas opens and the first deposition gas adsorbs to the substrate surface and L is a linking group comprising at least 1 carbon atoms; and
exposing the first deposition gas on the substrate surface to a second deposition gas to form a molecular layer on the substrate surface.
10 . The method of claim 9 , wherein the linking group consists essentially of carbon and hydrogen atoms.
11 . The method of claim 9 , wherein the linking group is substituted with one or more C1-C4 group.
12 . The method of claim 11 , wherein the first deposition gas consists essentially of
13 . The method of claim 9 , wherein the linking group comprises 3 carbon atoms.
14 . The method of claim 13 , wherein the first deposition gas consists essentially of
15 . The method of claim 9 , wherein the linking group is substituted with one or more halogen atom.
16 . The method of claim 9 , wherein the linking group is substituted with one or more carbonyl group.
17 . The method of claim 9 , wherein the linking group comprises at least one double bond.
18 . A molecular layer deposition method comprising:
exposing a substrate surface to a first deposition gas comprising one or more of
where a ring of the first deposition gas opens and the first deposition gas adsorbs to the substrate surface; and
exposing the first deposition gas on the substrate surface to a second deposition gas to form a molecular layer on the substrate surface.
19 . The method of claim 18 , wherein the first deposition gas consists essentially of
20 . The method of claim 18 , wherein the first deposition gas consists essentially of