Package of light emitting diode and method for manufacturing the same

1. A package of a semiconductor light emitting diode, the package comprising:

a base layer;

a semiconductor light emitting diode chip on the base layer;

a lead frame at least two lead frames electrically connected to the semiconductor light emitting diode chip;

a first portion of a reflective coating layer directly on the lead frame at least two lead frames; and

a molding material covering the semiconductor light emitting diode chip in a predetermined shape,

wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,

wherein each top surface of the at least two lead frames are a same height,

wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,

wherein the lead frame at least one of the at least two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,

wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,

wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and

wherein the reflective coating lager comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide

wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,

wherein the molding material directly contacts at least a portion of the reflective coating layer,

wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,

wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,

wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and

wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.

2. The package according to claim 1 , wherein the base layer comprises a metal.

3. The package according to claim 1 , further comprising:

an insulating layer on the base layer, wherein the insulating layer comprises a flame retardant-resin.

4. The package according to claim 1 , wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.

5. The package according to claim 1 , wherein ends of the reflective coating layer and base layer are aligned with each other.

6. The package according to claim 1 , wherein an entire top surface of the base layer is substantially flat.

7. The package according to claim 1 , wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

8. A display device comprising:

a package of a semiconductor light emitting diode, the package including a base layer;

a semiconductor light emitting diode chip on the base layer;

a lead frame at least two lead frames electrically connected to the semiconductor light emitting diode chip;

a first portion of a reflective coating layer directly on the lead frame the at least two lead frames; and

a molding material covering the semiconductor light emitting diode chip in a predetermined shape,

wherein a bottom surface of a second portion of the reflective coating layer is positioned higher than a bottom surface of the semiconductor light emitting diode chip,

wherein each top surface of the at least two lead frames are a same height,

wherein each bottom surface of the at least two lead frames are lower than a top surface of the semiconductor light emitting diode chip,

wherein the lead frame at least one of the two lead frames includes at least one end portion that is not covered with the reflective coating layer, the at least one end portion of the lead frame being adjacent to the semiconductor light emitting diode chip,

wherein a the bottom surface of the second portion of the reflective coating layer is substantially parallel to a top surface of the base layer,

wherein a thickness from the bottom surface of the second portion of the reflective coating layer to a topmost surface of the second portion of the reflective coating layer is thinner than a thickness from the bottom surface of the semiconductor light emitting diode chip to a topmost surface of the semiconductor light emitting diode chip, and

wherein the reflective coating layer comprises a white resin including at least one of titanium oxide, calcium carbonate, or barium sulfate, and zinc oxide

wherein an uppermost portion of the molding material covering the semiconductor light emitting diode chip is disposed higher than an uppermost portion of the reflective coating layer,

wherein the molding material directly contacts at least a portion of the reflective coating layer,

wherein a bottommost surface of the reflective coating layer is positioned higher than a topmost surface of the semiconductor light emitting diode chip,

wherein a contact surface between the reflective coating layer and the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip,

wherein the bottommost surface of the reflective coating layer is positioned higher than topmost surfaces of the at least two lead frames, and

wherein the topmost surfaces of the at least two lead frames are positioned higher than the topmost surface of the semiconductor light emitting diode chip.

9. The display device according to claim 8 , wherein the base layer comprises a metal.

10. The display device according to claim 8 , the package further comprising:

an insulating layer on the base layer and wherein the insulating layer comprises a flame retardant-4 resin.

11. The display device according to claim 8 , wherein ends of the lead frame at least two lead frames and ends of the reflective coating layer are aligned with each other.

12. The display device according to claim 8 , wherein ends of the reflective coating layer and base layer are aligned with each other.

13. The display device according to claim 8 , wherein an entire top surface of the base layer is substantially flat.

14. The display device according to claim 8 , wherein the bottom surface of the second portion of the reflective coating layer is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

15. The package according to claim 1, wherein a topmost surface of one of the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

16. The package according to claim 1, wherein a surface of the reflective coating layer is not corresponded to a side surface of the semiconductor light emitting diode chip.

17. The display device according to claim 8, wherein a height from a top surface of the reflective coating layer to a top point of the molding material is two times higher than a thickness of the reflective coating layer.

18. The display device according to claim 8, wherein a topmost surface of one of the at least two lead frames is positioned higher than the topmost surface of the semiconductor light emitting diode chip.

19. The display device according to claim 8, wherein a surface of the reflective coating layer is not corresponded to a side surface of the semiconductor light emitting diode chip.