Chip-size, double side connection package and method for manufacturing the same
A low resistance metal is charged into holes formed in a semiconductor substrate to thereby form through electrodes. Post electrodes of a wiring-added post electrode component connected together by a support portion thereof are simultaneously fixed to and electrically connected to connection regions formed on an LSI chip. On the front face side, after resin sealing, the support portion is separated so as to expose front face wiring traces. On the back face side, the semiconductor substrate is grounded so as to expose tip ends of the through electrodes. The front face wiring traces exposed to the front face side and the tip ends of the through electrodes exposed to the back face side are used as wiring for external connection.
1. A chip-sized microelectronic package comprising:
a semiconductor chip including a front face, a rear face, bond pads exposed at the front face, and an LSI region at the front face;
a plurality of through electrodes extending through openings within the bond pads, the openings and the plurality of through electrodes extending through the front and rear faces; and
a wiring component overlying the semiconductor chip, the wiring component including:
a resin layer having a top surface facing away from the plurality of through electrodes and a bottom surface facing toward the plurality of through electrodes;
wiring component traces extending along the top surface of the resin layer; and
a plurality of post electrodes extending away from the top surface of the resin layer and toward the through electrode, the plurality of post electrodes electrically connected to the wiring component traces,
wherein the plurality of post electrodes of the wiring component are electrically connected and joined to the plurality of through electrodes.
2. The microelectronic package of claim 1 , wherein the plurality of through electrodes include a low resistance metal.
3. The microelectronic package of claim 1 , wherein the plurality of post electrodes are aligned with and fixed to the plurality of through electrodes.
4. The microelectronic package of claim 1 , wherein the post electrodes are fixed to the bond pads.
5. The microelectronic package of claim 1 , wherein the wiring component traces are configured to be directly joined with other microelectronic elements external to the package.
6. The microelectronic package of claim 1 , further comprising traces joined to the plurality of through electrodes and overlying the rear face of the semiconductor chip, the traces configured to electrically join the through electrodes with devices external to the microelectronic package.
7. The microelectronic package of claim 1 , wherein the plurality of through electrodes include respective ends at the rear surface of the semiconductor chip, the rear ends exposed at the rear face of the semiconductor chip so that the microelectronic package may be electrically connected with another device external to the semiconductor chip.
8. The microelectronic package of claim 7 , wherein the package further includes a plurality of external electrodes respectively directly joined to the ends of the plurality of through electrodes.
9. The microelectronic package of claim 2 , wherein the post electrodes are electroplated post electrodes.
10. The microelectronic package of claim 1 , wherein the resin layer contacts the wiring component traces.
11. The microelectronic package of claim 1 , wherein the resin layer contacts the plurality of post electrodes.
12. A chip-sized microelectronic package comprising:
a semiconductor chip including an active front face, a rear face, and bond pads exposed at the front face;
a plurality of through electrodes extending through the front and rear faces;
traces extending along the rear face of the semiconductor chip; and
a wiring component overlying the semiconductor chip and electrically connected to the semiconductor chip, the wiring component including:
a resin layer having a top surface facing away from the plurality of through electrodes and a bottom surface facing toward the plurality of through electrodes;
wiring component traces extending along the top surface of the resin layer; and
a plurality of post electrodes extending through the resin layer, each of the post electrodes joined at a first end to a respective end of the plurality of through electrodes and each of the post electrodes joined at an opposed second end to the wiring component traces.
13. The microelectronic package of claim 12 , wherein the plurality of through electrodes include a low resistance metal.
14. The microelectronic package of claim 12 , wherein the post electrodes are aligned with and fixed to the plurality of through electrodes.
15. The microelectronic package of claim 12 , wherein the post electrodes are fixed to the bond pads.
16. The microelectronic package of claim 12 , further comprising traces joined to the plurality of through electrodes and overlying the rear face of the semiconductor chip, the traces configured to electrically join the plurality of through electrodes with devices external to the microelectronic package.
17. The microelectronic package of claim 12 , wherein the plurality of through electrodes include respective ends at the rear face of the semiconductor chip, the ends of the plurality of through electrodes exposed at the rear surface of the semiconductor chip so that the microelectronic package may be electrically connected with another device external to the semiconductor chip.
18. The microelectronic package of claim 17 , wherein the package further includes a plurality of external electrodes respectively directly joined to the ends of the plurality of through electrodes.
19. The microelectronic package of claim 12 , wherein the plurality of post electrodes are electroplated post electrodes.
20. The microelectronic package of claim 12 , wherein the resin layer contacts the wiring component traces.
21. The microelectronic package of claim 12 , wherein the resin layer contacts the plurality of post electrodes.