Laser processing apparatus and laser processing method

1. A laser processing apparatus configured to process a wafer with a laser beam which is applied to the wafer along a plurality of projected dicing lines on a surface of the wafer, the projected dicing lines demarcating the surface into a plurality of areas with devices formed in the areas, comprising:

a holding table having a holding surface configured to hold the wafer thereon;

processing means for processing the wafer held on the holding table with the laser beam which is focused at a processing point along the projected dicing lines; and

X-moving means for moving said holding table in X-directions which are directions along which the projected dicing lines extend; wherein

said processing means includes:

a laser oscillator configured to oscillate the laser beam;

a first condenser and a second condenser juxtaposed in Y directions perpendicular to said X directions over said holding surface and disposed in order of arrival of the laser beam from said laser oscillator; and

switching means disposed on the optical path of the laser beam from said laser oscillator in the Y directions and arranged to switch between a mode configured to focus the laser beam from said laser oscillator with said first condenser and a mode configured to focus the laser beam from said laser oscillator with said second condenser,

said switching means includes:

a ½ wavelength plate;

rotating means for turning said ½ wavelength plate selectively to a first angle and a second angle;

a polarizing beam splitter configured to reflect 100% an S-polarized laser beam whose plane of polarization has been rotated by said ½ wavelength plate that has been turned to the first angle and whose optical path extends along the Y directions, to travel along an optical path in Z directions perpendicular to the X directions and the Y directions to said first condenser, so that said S-polarized laser beam is focused by said first condenser; and

a mirror configured to reflect a P-polarized laser beam which has been transmitted 100% through said polarizing beam splitter, and whose plane of polarization has been rotated by said ½ wavelength plate that has been turned to the second angle and whose optical path extends along the Y directions, to travel along an optical path in the Z directions to said second condenser, so that said P-polarized laser beam is focused by said second condenser;

said laser processing apparatus further includes:

first indexing feed means for indexing-feeding said polarizing beam splitter and said first condenser in one of the Y directions;

second indexing feed means for indexing-feeding said mirror and said second condenser in one of the Y directions; and

control means; and

while said wafer is being processed with the laser beam from either one of said first condenser and said second condenser, said control means operates one of said first indexing feed means and said second indexing feed means to indexing-feed the other of said first condenser and said second condenser to a next one of the projected dicing lines to be processed.

2. A laser processing method of processing a wafer with a laser beam using the laser processing apparatus according to claim 1 , comprising:

a holding step of holding the wafer with the projected dicing lines on a holding table;

an alignment step of detecting the projected dicing lines on the wafer held in said holding step;

a first processing step of positioning a processing point of said first condenser which has focused the laser beam from said laser oscillator, on one of the projected dicing lines, and moving said holding table in a +X direction to process said wafer with the laser beam;

a first indexing feed step of positioning a processing point of said second condenser on a next one of the projected dicing line to be processed during said first processing step;

after said first indexing feed step, a second processing step of moving said holding table in a −X direction which is opposite to the +X direction in said first processing step to process said wafer with the laser beam at the processing point of said second condenser;

a second indexing feed step of positioning the processing point of said first condenser on a next one of the projected dicing line to be processed during said second processing step; and

a repeating step of repeating said first processing step, said first indexing feed step, said second processing step, and said second indexing feed step.